BFW43

BFW43 SEME-LAB | Alldatasheet

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Technical content

VCBO Collector – Base Voltage VCEO Collector – Emitter Voltage (IB = 0) VEBO Emitter – Base Voltage (IB = 0) IC Collector Current PD Total Device Dissipation TA = 25 °C PD Total Device Dissipation TC = 25 °C Tstg Storage Temperature TJ Max Operating Junction Temperature R θJA Thermal Resistance Junction to Ambient R θJC Thermal Resistance Junction to Case -150V -150V -6V 0.1A 0.4W 1.4W –55 to 200°C 200°C 438°C/W 125°C/W ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PNP SILICON TRANSISTOR

FEATURES

• PNP High Voltage Planar Transistor  Hermetic TO18 Package  Full Screening Options Available MECHANICAL DATA Dimensions in mm (inches) Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Document Number 5989 Issue 1 TO–18 METAL PACKAGE PIN 1 – Emitter Underside View PIN 2 – Base PIN 3 – Collector 2.54 (0.100) Nom. 0.48 (0.019) 0.41 (0.016) dia. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 12.7 (0.500) min.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Document Number 5989 Issue 1 (1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2% Parameter Test Conditions Min. Typ. Max. Unit. V(BR)CBO Collector - Base Breakdown Voltage (1)IC = -10µA , IE =0 -150 V V(BR)CEO Collector - Emitter Breakdown Voltage (1)IC =- 2mA , IB =0 -150 V ICBO Colllector Cut Off Current V(BR)EBO Emitter - Base Breakdown Voltage (1)IE = -10µA , IC =0 -6 V VCE(sat) Collector - Emitter Saturation Voltage (1)IC =-10mA , IB = -1mA -0.1 -0.5 V VBE(sat) Base - Emitter Saturation Voltage (1)IC =-10mA , IB = -1mA -0.74 -0.9 V hFE DC Current Gain (1) IC =-1mA, VCE = -10V IC =-10mA, VCE = -10V IC =-10µA, VCE = -10V TA = -55 °C 100 fT Current Gain - Bandwith Product MH Z C EBO Emitter- Base Capacitance VEB =-0.5V , IE = 0 , f=1 MHZ 20 25 pF C CBO Collector- Base Capacitance VCB =-5V , IE = 0 , f=1 MHZ 5 7 pF ELECTRICAL CHARACTERISTICS Continued (TA = 25°C unless otherwise stated) VCB = -100V , IE = 0 VCB = -100V , IE = 0 TA =125 °C -0.2 -0.03 -10 -10 nA µA IC =-1mA ,VCE =-10V, f=20 MHZ IC =-10mA