BFW30 SIEMENS | Alldatasheet

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25C D M@® 8235605 0004728 7 MESIEG re B17 NPN Silicon RF Broadband Transistor BFW 30 SIEMENS AKTIENGESELLSCHAF : BFW 30 is an epitaxial NPN silicon planar RF transistor in a TO 72 case (18 A 4 DIN . . 41876), designed for universal application up to the GHz range, e. g. for vertical amplifiers | in broadband oscillographs and for broadband antenna amplifiers. The terminals E, B, C z are insulated from the case. : : 2 £ Bo

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| BFW 30 062702-F320 ‘2 2 ound Cole al “Haat Approx. weight 0.4 Dimensions in mm : Maximum ratings Collector-base voltage Veso 20 Vv Collector-emitter voltage Veo 10 v Emitter-base voltage Veo 25 v Collector current Ig 50 mA Collector-peak current (f= 1 MHz) Tem 100 mA Junction temperature ul 200 °c Storage temperature range Tstg -65 to +175 °C Total power dissipation (Tamp $ 25°C) Prot 250 mw Thermal resistance Juncition to ambient air Rens | $700 | Kw Junction to case Rinse $400 Kw 7714 “

2105 C-14

|) 25 D mM 8235605 0004729 9 MESIEG | : 25 04729 _ O--~ BI-/7 BFW 30 : SIEMENS AKTIENGESELLSCHAF Static characteristics (Tam = 25°C) . Collector cutoff current (Vego = 10 V) keeo | <50 | nA DC current gain Uc = 25 mA; Voce = 5 V) Deg 225 - Uc = 50 mA; Veg = 6 V) hee 225 - Dynamic characteristics (Tam = 25°C) Transition frequency (Ue = 50 mA; Veg = 5 V; f = 200 MHz) fr 1.6 GHz Reverse transfer capacitance . Uc = 2 mA; Veg = 5 V; f = 1 MHz) Ci20 08 pF : Collector-base capacitance (Vcgo = 5 V; f = 1 MHz) Ccao $1.5 pF : Power gain Uc = 30 mA; Vcg = 5 V; f = 200 MHz; Rg = 602) Goo 21 (219) dB (Uc = 30 mA; Veg = 5 V; f = 800 MHz; Rg = 602) Goo 75 dB Noise figure (Ic = 2 mA; Vor = 6 V; f = 500 MHz; Rg = 60 0) NF Output voltage” Uc = 30 mA, Veg = 5 V; di = 60 GB; Rg = Ry = 75 Q) Vo 350 mV Total perm. power dissipation versus temperature: MW Prot = f (Tact) TTT TT TTT a CECEEEE eee EREEC CET { FRCEXEEceo ; mo CONC ACE [Pam Nene] w TYTN ET PTT IN ALT] CPT TP NAT TI wo LCCC ECE TPT T TINY TI CTT TTT AAT SERN CYP ETT Ti »_-LELT TTT IA 0 100 200°C —-T . 1) Three tone modulation f approx. 800 MHz 775 2106 0-01 :

25C D MM 8235605 OOO4730 S MMSIEG « _- 25C 04730. OT B/~-/7 BFW 30 SIEMENS AKTIENGESELLSCHAF . S parameter Operating point: Veg = 5 V, Ic = 30 mA, Z) = 502 f Sy 9 Sa 9 Si 9 Soo 9 (MHz) 0,1 0,171 -89 11,49 107 0,036 74 0,580 -17 0,2 0,133 | -126 6,20 94 0,064 | 80 0,494 | -13 0,3 0,133 | -148 4,26 89 0,093 | 82 0465 | -11 04 0,154 | -160 3,27 84 0,122 | 84 0,450 | -10 05 0,177. | -165 2,67 80 0,150 | 85 0417 | -11 : 0,6 0,197 | -168 2,28 7 0,178 | 86 0,402 | -15 . 0,7 0,214 | -171 1,98 73 0,201 | 87 0,399 | -17 : 08 0,230 | -172 1,84 69 0,229 | 88 0,399 | -20 0,9 0,224 | -170 1,69 68 0,260 | 89 0,406 | -24 1,0 0,221 172 1,54 66 0,286 | 89 0,419 | -27 1,1 0,204 | -173 1,42 63 0,309 | 90 0,447 | -28 1,2 0,183 | ~172 1,33 59 0,332 | 89 0465 | -31 1,3 0,138 | -168 1,26 57 0,355 | 88 0,501 ~32 14 0,100 | -168 1,17 53 0,372 | 87 0,515 | -32 15 0,061 | -162 1,11 49 0,390 | 83 0,534 | -35 1.6 0,039 | -127 1,05 45 0,409 | 80 0,564 | -37 1,7 0,068 | -80 0,99 40 0416 | 77 0,605 | -41 1,8 |0,142 | -83 0,87 31 0,393 | 71 0,650 | -49 1,9 0,299 | -97 0,69 17 0,321 | 61 0,734 | -60 2,0 0,559 | -124 0,32 4 0,161 | 62 0,786 | -81 7716 2107 0-02