BFW16A SIEMENS | Alldatasheet
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= . = " 25C D M® 8235605 0004725 1 MESIEG NPN Silicon RF Broadband Transistor BFW 16A “ STENENS AKTIENGESELLSCHAF ° T= Bl -23 ——_—— BFW 16 A is an epitaxial NPN silicon planar RF transistor in TO 39 metal case (6 C 3 DIN 41873) intended for general applications up to the GHz range, eg. for driver and output stages of channel and range antenna amplifiers up to band V, as well as for vertical amplifier output stages in broadband oscillographs. The collector is conductively connected to the case. . Type Ordering code . CE B BFW16A_ | 062702-F319 == oF . SH Bagg a. . Approx. weight 1.6.g Dimensions inmm Maximum ratings Collector-base voltage Veo 40 Vv Collector-emitter voltage (Rez $ 50 9) Veen 40 v Collector-emitter voltage Veo 25 v Emitter-base voltage Veso 2 > oiv ; Collector current Tc 150 mA . Collector peak current (f 2 1 MHz) Tem 300 mA Junction temperature Ty 200 °C Storage temperature range Tatg -65to+200 | °C Total power dissipation (Tease = 125°C) Prot 15 w Thermal resistance Junction to ambient air Rina | $250 | Kw Junction to case Rinse $50 Kw aoe : . m7
2102 CH1L
- @5C D MM 4235605 0004726 3 MMESIEG © 25C_ 04726 O-T>FA-2Z BFW 16 A SIEMENS AKTIENGESELLSCHAF Static characteristics (Temp = 25°C) ‘ Collector cutoff current (Voao = 20 V; Tam = 125°C) kes0 $20 uA Collector-emitter saturation voltage") {Ig = 100 mA) Veesat $0.76 v DC current gain (ic = 50 mA; Voe = 5 V) hee 226 - Ug = 160 mA; Voge = 5 V) hee 226 - Dynamic characteristics (Tamb = 25°C) : Transition frequency . (Ic = 150 mA; Veg = 15 V; f = 200 MHz) tr 1.2 GHz Reverse transfer capacitance (ic = 10 mA; Vog = 15 V: f = 1 MHz) Ci20 17 pF Collector-base capacitance (Voao = 18 V; f = 1 MHz) Copo <4 pF Power gain (Ic = 70 mA; Vog = 18 V; f = 200 MHz; Ry = 60.9) Goo 16 4B Uc = 70 mA; Veg = 18 V; f = 800 MHz; Rg = 60.2) Gog 65 4B Noise figure : Uc = 30 mA; Veg = 15 V; : f= 200 MHz; Ry = 78 Q) NF <6 dB Output voltage?! Vo 600 mV Uc = 70 mA; Veg = 18 V; Ri = Ry = 75 Q; diy = 60 dB) S parameter Operating point: Ic = 70 mA, Vee = 18 V; Z, = 50.2 f Si 9 |S ° Si2 9 Sez © | Grrax . (GHz) (dB) 04 |0,561 | 165 |2803 |61 0,115 |74 |0,309 |- 72 | 11.0 05 |os68 | 159 |2,179 |65 0,140 |74 |0336 |- 81 | 90 06 |0583 | 155 | 1,822 |47 0,162 173 |0,379 |- 91] 7,7 0.7 |os8s | 151 |1,547 |41 0,192 |71 0441 |- 99] 66 os |0579 | 146 | 1,356 |35 0219 [71 0,505 |-103] 5,7 0,9 |0572 | 141 | 1,181 |30 0,248 |69 | 0,556 |-106 | 4.8 10 loses | 136 |1,076 |26 0.273 |68 0581 |-109 | 4,1 1) Applicable to that characteristic passing through Jc = 110 mA, VcE = 1 V at constant Jp. 2) Measured with three tone modulation f approx. 800 MHz 772 . - 2103 c-12
“25C D M® 8235605 0004727 5 MMSIEG ~ 25C 04727 0 “T= 3-23 BFW16A ™ SIEMENS AKTIENGESELLSCHAF Total perm. power dissipation a Reet ns mona Je a COCOA COCOA { Cece oo ; » LEE ECE CCOCCCCeAre . COCCeee A SGeseeee08 : HSH CV
6 LSA
» CLCEEE TEEN a 100 200°C ~~ _— 773