BFW16A NJSEMI | Alldatasheet
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, fi ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BFW16A BFW17A CATV-MATV AMPLIFIERS
DESCRIPTION
The BFW 16A and BFW 17A are multi-emitter sili- con planar epitaxial NPN transistors In JedecTO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily intended for final and driver stages in channel-and band-aerial amplifiers with high output power from 40 to 860 MHz. Another possible application is as the final stage of the wide band vertical amplifier In high speed oscil- loscopes. TO-39 INTERNAL SCHEMATIC DIAGRAM PN Q| NPN ABSOLUTE MAXIMUM RATINGS Symbol Vceo VCER VCEO VEBO Ic ICM Plot TBIJ, T, Parameter Collector-bass Voltage (IE - 0) Collector-emitter Voltage (Ren s 50 n) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (Ic = 0) Collector Current Collector Peak Current Total Power Dissipation at Tamb S 25 °C at TCM« S 125 °C Storage and Junction Temperature Value 150 300 0.7 1.5 ~ 65 to 200 Unit V V V V mA mA W W NJ Semi-Conductora reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use N J Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors
Rth ]-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 250 °c/w -c/w ELECTRICAL CHARACTERISTICS (Tamb = 25 <€ unless otherwise specified) Symbol ICBO V(BR)EBO VCEK*/" hFE* h CCBO C,e NF Qps Po Parameter Collector Cutoff Current (IE = 0) Emitter-base Breakdown Voltage dc=0) Collector-emitter Knee Voltage DC Current Gain Transition Frequency Collector-base Capacitance Reverse Capacitance Noise Figure (for BFW l6Aonly) Power Gain (not neutralized) Output Power Test Conditions Voa=20V Tamb =150 °C IE =100uA lc = 100mA Ic - 50 mA VCE - S V Ic <= 150mA VC6=5V Ic = 150mA VCE = 15V f . 500 MHz for BFW 16A for BFW 17A I6=0 VcB"15V f = 1 MHz lc-10mA VcE-15V f - 1 MHz lo=30mA V0E-15V Rf . 75 n f - 200 MHz Ho " 70 mA VCE = 1 8 V f = 200 MHz for BFW 16A and BFW 17A f _ 800 MHz For BFW 16Aonly lc-7omA VCE -18V Channel 9<1' for BFW 16A for BFW 17A Channel 62|2> For BFW 16A only li/lln. 130 Typ. 1.2 1,1 1.7 6.5 150 150 Max. 0.75 Unit UA V V GHz GHz PF PF dB dB dB mW mW mW * Pulsed: pulse duration = 300 us. duty cycle = 1 %. " IB = value for which Ic - 110 mA at Voe = 1V, (1) IP " 202 MHz, f, = 205 MHz, f(2,-p, - 208 MHz. (2) fp = 798 MHz. f, - B02 MHz, f(»,-pi = 806 MHz.