BFW12 NJSEMI | Alldatasheet
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^s-tni-donaactoi ^Products., 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BFW12 BFW13 N-CHANNEL SILICON FETS Symmetrica! n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are intended for battery powered equipment and other low current-low voltage applications. QUICK REFERENCE DATA Drain-source voltage ± Vrjs max. 30 Gate-source voltage (open drain) ~VGSO max. 30 Total power dissipation up to TamD =* 1 10 °C Ptot max. 1 50 BFW12 BFW13 Liram current ^^ ." VDS=15V;VGS>0 IDSS < 5 Gate-source cut-off voltage lD = 0,5nA;VDS=15V -V(p)QS < 2,5 Feedback capacitance at f = 1 MHz VDS= 15V;VGS = 0 Cra < 0.80 Transfer admittance (common source) VDS=15V;lD = 200MA;f=1 kH2 |yfs > 0,5 Equivalent noise voltage VDS=15V;lD = 200(iA B = 0.6 to 100 Hz Vn < 0.5 0,2 1,5 1.2 0,80 0,5 0,5 V V mW mA mA V PF mS MV MECHANICAL DATA Dimensions in mm Fig. 1 TO-72. Pinning 1 - source 2 ° drain 3 = gate 4 - shield lead connected to case Note: Drain and source are interchangeable. NJ .Semi-C t'lidutlors reserves the right to change test conditions, parameter limit! und package dimensions wiihonl notice Inliirmation rumith«t) by NJ Scmi-Cunducton if believed to he both uccurale find reliable M the lime of going to press. However II-;K nn'fs fi) \\ciif\\u il;iln-;hivli <r^ . nrrvnt hefiirc nlncina unlen
CHARACTERISTICS Tj » 25 °C Gate cut-off currents -vGS = 10 v; YDS = o -iGSS -VGS-10V;VDS=0;TJ = 1S00C -IGSS Drain current *) YDS = is v; VGS= o IDSS Gate -source voltage ID= 50^^08 = 15V -VGS Gate-source cut-off voltage ID = 0. 5nA; VQS = 15 V ~V(P)GS y parameters at f = 1 kHz; Tamb = 25 °C VDS = 15 V; VGS = 0 Transfer admittance |vfs| Output admittance |yos| VDS = 15 V; ID = 500 p A Transfer admittance |yjs| Output admittance |yosj VDS = 1S v'- 1D = 200 (aA Transfer admittance |yfs| Output admittance lvos| f - 1 MHz; Tamb - 25 °C YDS = is v; VGS = o Input capacitance Cjss Feedback capacitance Crs Equivalent noise voltage YDS = 15 V; 1D = 200 (iA; Tamb = 25 °C B = 0. 6 to 100 Hz Vn BFW12 BFW13 J I BFW12 1 1 BFW13 unless otherwise specified BFW12 BFW13 < 0.1 0. 1 nA < 0. 1 0. 1 |^A > 1 0.2 mA < 5 1.5 mA > 0.5 0.1 V < 2.0 1.0 V < 2.5 1.2 V > 2.0 1.0 mS < 30 10 gS > 1.5 - mS < 10 - pS > 0.5 0.5 mS < 5 5 pS < 5 5 pF < 0.80 0.80 pF < 0.5 0.5 yV RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage ^DS max. Drain-gate voltage (open source) ^DCO max. Gate-source voltage (open drain) ~VGSO max. Drain current IQ max. Gate current IG max. 30 V 30 V 30 V 10 mA S mA Total power dissipation up to Tamb = 86 °C rtot max. 150 mW Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient Tstg -65 to+175 °C Rt-h i - a max. 175 590 kf/Ui
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage *^DS max. 30 V Drain-gate voltage (open source) VDGO max. 30 V Gate-source voltage (open drain) "^GSO max. 30 V Drain current Irj max, 10 mA Gate current IQ max. 5 mA Total power dissipation up to Tamb = 86 °C Ptot max. ISO mW Storage temperature range Tstg "65 to + 1 75 °C Junction temperature Tj max. 175 °C THERMAL RESISTANCE From junction to ambient R^ j_a = 590 K/W