BFU308 NJSEMI | Alldatasheet
Document overview
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Technical content
<z~>£,mi-C.onductori iJ-^ioau.cti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 N-channel silicon field-effect transistors BFU308/309/310
FEATURES
- Low noise
- Interchangeability of drain and source connections
- High gain.
DESCRIPTION
Silicon symmetrical n-channel junction FETs In a TO-18 envelope. They are intended for use in UHF/VHF amplifiers, oscillators and mixers. PINNING-TO-18 PIN CONFIGURATION Flg,1 Simplified outline and symbol. PIN ±VDS loss Pk,l -VM» Yh PARAMETER drain-source voltage drain current BFU308 BFU309 BFU310 total power dissipation gate-source cut-off voltage BFU308 BFU309 BFU310 common-source transfer admittance CONDITIONS VDS = JOV; up to IS—A • 50 C V SB 1 0 V" VDS«10V; I0 » 10 mA MIN. MAX. 275 6.5 6.5 UNIT V mA mA mA mW V V V mS \\ .Semi-C (inductors reserves the right to change hat conditions, parameter limits ;ind package dimension! \\vithotil notice Information liinmned by NJ Scrm-Conducton « belwved to he holb accuratt and reliable ,11 the lime ut going to press. However VI Scnii-C oiiJucioK .isMiiiK-* iHi r^pntuibility for ;iny emirs or tiiniuiuiM Jiscuvcred in its use NJ Semi-luiidtwMs
N-channel silicon field-effect transistors BFU308/309/310 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL ±VDS -vQSO -VQOO la TUfl PARAMETER drain-source voltage gate-source voltage gate-drain voltage forward gate current total power dissipation storage temperature range junction temperature CONDITIONS DC value uptoTBrt,-50°C MIN. -65 MAX. 275 150 150 UNIT V V V mA mW THERMAL RESISTANCE SYMBOL R|h|-a PARAMETER from junction to ambient (note 1) VALUE 360 UNIT K/W Note 1. Device mounted on a prfnted-clrcuit board, maximum lead length 4 mm, mounting pad for the drain lead minimum 10x10 mm. STATIC CHARACTERISTICS SYMBOL -V(Bfl)GSS 'DSS ~'oss VQS8 -V«w FW, IYJ IYMI PARAMETER gate-source breakdown voltage drain current BFU308 BFU309 BFU310 reverse gate leakage current gate-source forward voltage gate-source cut-off voltage BFU308 BFU309 BFU310 drain-source on-reslstance common-source transfer admittance common-source output admittance CONDITIONS VD°S = 0 VDS=10V; -Vas-15V; la- 1mA VDS=10V; ID =» 1 jiA Vos-100mV; VDS=10V; ID = 10 mA VDS-10V; ID -10mA MIN. TYP. MAX. 6.5 6.5 250 UNIT V mA mA mA nA V V V V mS MS