BFT92 INFINEON | Alldatasheet

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/G01 For broadband amplifiers up to 2 GHz at collector currents up to 20 mA /G01 Complementary type: BFR 92P (NPN) VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFT92 W1s 1 = B 2 = E 3 = C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 25 mA Base current IB 3 Total power dissipation TS /G01 78 °C 1) Ptot 200 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point2) R thJS /G01 360 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 - - V Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 2 V, IC = 0 IEBO - - 10 µA DC current gain IC = 15 mA, VCE = 8 V hFE 15 50 - -

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz fT 3.5 5 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 0.54 0.8 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce - 0.25 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 0.77 - Noise figure IC = 2 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz F 3.2 dB Power gain, maximum available 1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Gma 13.5 Transducer gain IC = 15 mA, VCE = 8 V, ZS = ZL = 50/G02 , f = 900 MHz f = 1.8 GHz |S21e|2 11.5

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.5354 fA VAF = 10.983 V NE = 1.1172 - VAR = 47.577 V NC = 1.206 - RBM = 1.5939 /G01 CJE = 1.7785 fF TF = 32.171 ps ITF = 0.013277 mA VJC = 1.2 V TR = 2.0779 ns MJS = 0- XTI = 3 - BF = 98.533 - IKF = 0.016123 A BR = 10.297 - IKR = 0.019729 A RB = 7.9562 /G01 RE = 1.5119 /G01 VJE = 0.79082 V XTF = 0.30227 - PTF = 0 deg MJC = 0.3 - CJS = 0f F XTB = 0- FC = 0.75167 - NF = 0.90551 - ISE = 12.196 fA NR = 1.2703 - ISC = 0.024709 fA IRB = 0.79584 mA RC = 0.66749 /G01 MJE = 0.32167 - VTF = 0.21451 V CJC = 922.07 fF XCJC = 0.3 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: LBI = 0.85 nH LBO = 0.51 LEI = 0.69 LEO = 0.61 LCI = 0 LCO = 0.49 C BE = -f F C CB = 84 fF C CE = 165 Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes

Total power dissipation Ptot = f (TS ) 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 P tot Permissible Pulse Load R thJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Collector-base capacitance Ccb = f (VCB ) f = 1MHz 0 4 8 12 16 V 22 VCB 0.0 0.2 0.4 0.6 0.8 1.0 1.2 pF 1.6 C cb Transition frequency fT = f (IC) V CE = Parameter 0 5 10 15 20 mA 30 IC 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 GHz 6.0 fT 10V 0.7V Power Gain G ma , Gms = f(IC) f = 1.8GHz VCE = Parameter 0 5 10 15 20 mA 30 IC 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 dB 8.5 G 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 5 10 15 20 mA 30 IC dB G 10V 0.7V

Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 VCE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC=15mA Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50/G01 ) VCE = Parameter, f = 900MHz 0 4 8 12 16 20 mA 28 IC dBm IP3 Power Gain |S21|2= f(f) V CE = Parameter f dB S21 10V 2V0.7V IC =15mA Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7 IC =15mA