BFT75 SIEMENS | Alldatasheet

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25C D MM 4235605 OOO4713 5 MBSIEG : T- 30-17 NPN Silicon RF Broadband Transistor BFT 75 BFT 75 is an epitaxial NPN silicon planar transistor in TO 236 plastic package (23 ‘ A 3 DIN 41869), intended for use in low-noise input and intermediate stages in RF amplifiers up to the GHz range, especially for high Q antenna and broadband ampli- fiers in film circuits. The transistor is marked "KA". 1200512005 Type Mark Ordering code ae Of scons E | BI . BFT75 | KA Q62702-F513 Ej c 3. - ar Ost08 .0,25 3.4 243s Approx. weight 0.02 g Dimensions in mm Maximum ratings Collector-emitter voltage Veo 15 v Collector-emitter voltage (Raz $ 50 2) Veer 20 v Collector-base voltage Veo 20 v Base-emitter voltage Vepo 2.5 Vv Collector current Ic 50 mA Base current Is 10 mA Storage temperature range Tetg ~55to +125 | °C Junction temperature jj 150 °c Total power dissipation (Tamb S 25°C) Prot 260 mw . Thermal resistance Junetion to ambient air Rena | $600 | Kw Junction to substrate back" Rinssa $400 Kw 1) Ceramic substrate 0.7 mm; 2.6 cm@area : 769 2090 B-13 .

. : . @5C D MM 4235605 GOO47L4 7 MMSIEG . 25C 04714 0-J-H-/7 BFT 75 “SIEMENS AKTIENGESELLSCHAF ~——— CS Static characteristics (Tam = 25°C) ‘ Collector cutoff current (Ves = 10 V) Icao $50 nA (Veg = 10 V: Tam = 60°C) Teso 50.6 HA Collector cutoff current (Veg = 20 V; Veg = 0) Tees $100 HA Emitter cutoff current (Veg = 2 V) Tepo sto. | pA DC current gain (Ic = 25 mA; Vee = 8 V) hee 230 - . Uc = 50 mA; Vee = 5 V) hee 230 - Dynamic characteristics (Tam = 25°C) : : ‘Small signal current gain Uc = 25 mA; Voe = 8 V; f= 1 kHz) hie 80 - : Transition frequency (Ug = 26 mA; Vee = 8 V; f = 200 MHz) fr 5 GHz (Ic = 50 mA; Vee = 5 V; f = 200 MHz) fr 45 GHz Output capacitance (Vea = 8 V; Ie = 0) Cob 08 pF Input capacitance (Veg = 0.5 V; Ie = 0) Cin 24 pF Reverse transfer capacitance (Ic = 1 mA; Vee = 8 V) Ci20 0.65 pF Noise figure Ug = 10 mA; Veg = 8 V; f = 800 MHz; Ry = 600) NF 28 aB (ic = 3 MA; Veg = 8 V; f = 500 MHz; Rgops) NFopt 1.9 4B Power gain Uc = 26 mA; Vee = 8 V; f= 800 MHz, Ry = 60.2) Gye 12 dB Output voltage (Ic = 25 mA; Veg = 8 V: diy = 60 dB; Ry = Rg = 75 9) Vo 350 mv 1) Three tone modulation f approx. 800 MHz 760 :

2091 B-14

25C D MM 8235605 OOO47L5 9 MESIEG - 25¢ 04715 0 T-3I~/7 BFT 75 ~~ STEMENS AKTIENGESELLSCHAF S parameter: Operating point: Vcg = 5 V; Ig = 30 mA, Z, = 502 t |Site ® (Se | % [Six |% |S | % (GHz) 0,1 0,316 |-110 | 25,317 |115 0,021 | 68 0,575 |-38 0,2 0,260 | -141 14,120 | 99 0,036 | 69 0,386 |-32 0,3 0,262 |-164 9,469 | 90 0,051 |71 0,305 |-37 04 0,246 | -166 7,250 | 84 0,067 | 70 0,332 |-31 0.5 0,241 176 6,848 | 80 0,082 | 70 0,278 |-31 0.6 0,261 178 4,855 | 76 0,096 | 69 0,304 |-37 : 0,7 0,227 167 4,253 | 72 0,112 |68 0,314 |-27 08 0,246 166 3,673 | 67 0,126 | 66 0,247 |-31 09 0,217 169 3,346 | 64 0,143 | 64 0,278 |-44 1,0 0,266 150 3,008 | 61 0,156 |63 0,322 |-37 1,1 0,241 165 2,782 | 57 0,171 | 62 0,254 |-36 1,2 0,249 139 2,540 | 54 0,185 | 60 0,281 -49 1,3 0,262 139 2,365 | 50 0,199 |57 0,291 |-46 14 0,282 131 2,221 | 47 0,216 | 65 0,246 |-650 1.6 0,277 134 2,120 | 44 0,229 | 54 0,312 | -62 ' 1,6 0,283 122 1,992 | 40 0,238 {52 0,308 | -49 1,7 0,327 121 1,863 | 38 0,251 | 61 0,181 | -54 . 18 $0,311 122 1,737 | 33 0,259 | 48 0,286 | -92 1,9 0,312 114 1,719 | 30 0,281 145 0,361 |-68 2,0 0,330 112 1,662 | 29 0,295 | 44 0,251 |-56 Total perm. power dissipation Yeraus temperature MW Pict * f (Teen) CT . CO fe FEAT { LONE oo LOTN TTT LONE LETT N TT COON LETT NTT wo LETT TENT LETT TT TTT N TTT LITT TTT TTT NTT LTT TTT) COC | oe LLL TTT TEN 0 0 100 150°C — he @ : 761 2092 c-01