BFT65 SIEMENS | Alldatasheet

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Technical content

NPN Silicon RF Transistor BFT 65 @ For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. 3 1 2 verosie0 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type meting | ‘Ordering Code Pin Configuration | Package") 1 2 3 Maximum Ratings Parameter [Symbor [Values | ai Collector-emitter voltage, Vee = 0 Total power dissipation, Ts < 94 °C®) [Po «(400s [ mw Junction temperature 150 c Ambient temperature range -65...+ 150 Storage temperature range -65...+ 150 Thermal Resistance 1) For detailed information see chapter Package Outlines. 2 Package mounted on alumina 1 mm x 16.7 mm x 0.7 mm. 8) Ts is measured on the collector lead at the soldering point to the pcb. 1022 qm 823505 0067124 42 a

Electrical Characteristics

at Ts = 25°C, unless otherwise specified. ns a ale Symbol [Values [Un DC Characteristics Collector-emitter breakdown voltage Viericeo Vv Ic=1mA, la=0 Collector-emitter cutoff current Ices 10 pA Vee = 20 V, Vee = 0 Collector-base cutoff current Ice0 nA Ves = 10 V, /e=0 Emitter-base cutoff current Tee. 100 | A Vee=2.5V,ic=0 DC current gain = To = 25 MA, Vee =8 V Tc = 50 mA, Ver =5 V Siemens Aktiengesellschaft 1023 @ 4235605 0069125 329

a at Ta = 25°C, unless otherwise specified. AC Characteristics Transition frequency fr GHz Ic = 25 mA, Vee = 8 V, f= 200 MHz Collector-base capacitance Con pF Vos = 10 V, Vee = vbe = 0, f= 1 MHz Collector-emitter capacitance Ceo 0.3 Vee = 10 V, Vee = voe = 0, f= 1 MHz Output capacitance Coos Vee = 10 V, Vee = vbe = 0, f= 1 MHz Noise figure F dB Ic = 10 mA, Vee = 8 V, f = 800 MHz, Zs = 60 2 Power gain Gpe Io =25 MA, Vee = 8 V, f = 800 MHz, Zs = 60 Q, Zi = Ziopt Transducer gain 1 Sere 1? Tc = 25 mA, Vee = 8 V, f= 500 MHz, Zo = 502 Linear output voltage Vor = Voo! mv two-tone intermodulation test Ic = 25 mA, Vee =8 V, din = 60 dB (fi = 806 MHz, fo = 810 MHz, Zs = Zi = 50.2 Third order intercept point IPs dBm Ic = 25 mA, Vee = 8 V, f = 800 MHz Siemens Aktiengesellschaft 1024 /@@ 8235605 OOb91cb 2bS a

Total power dissipation Prt = f (Ta"; Ts) Transition frequency fr =f (Ic) “Package mounted on alumina Vee = 5 V, f= 200 MHz Pet 100 HHT 5 IAT LEEN HEH ( ooo TNT 0 f CeAp oe LEAMA sf ‘oo pot AS He : we Het EN Io WT TEEN PCOOCee TLL ot LETTE TT] oO 50 100 "C150 0 10 20 30 40 mA 50 sity eh Collector-base capacitance Cu» = f (Vce) Vee = vee = 0, f= 1 MHz HA "EEE Ke FEC Coy NEE {eee Pre COCCeECeee CNECCECEEe CONCEP os SRE COCCCOISS SEodeanene 4 Fe EHH] 0 10 Vv 20 — No Siemens Aktiengeselischaft 1025 . @ 8235605 OOb9127? 1TL

Noise figure F = f (Zs) Noise figure F ma =f (Ic) Vee = 8 V, f= 10 MHz Vee = 8 V, f = 800 MHZ, Zion (G) . Foo Ty [TTT y [FT] a etaabearaee oS Z| pa, WN Fin BSGSEEREUESEEE?| rf sO OAT TUT ss im SAAS | HA DAH | \\NED 48074) {tI CO ae CIN SPT TT a ReeReEen ad [| CWA er Ne ia 2s ae aL Neer im | FHT NG ae Coord CASS eer | | PEE TT [b> Ng HE HEH | {SSE eee ye FHT} FRA HH} PAA [Tt Seeeeeees COT Het EPEEFEESHH SLEEEE HEHE 0 100 200 9 300 oO 10 20 mA 30 —-Z — I, Common Emitter S Parameters a (ee Giz [waa [anc [wac [anc [waa [anc [mac [Ane Tc = 25 mA, Vee = 8 V, Zo = 50 Q 05 0.343 -174 6.311 85 0.058 72 0.441 -23 06 0.347 179 5.236 80 0.068 71 0.340 -19 07 0.347 174 4.604 76 0.081 72 0.346 -35 sd 0.377 161 2.969 64 0.118 71 0.355 -37 13 0.415 156 2.538 59 0.133 70 0.346 -43 15 0.439 153 2.212 54 0.157 69 0.345 -49 16 0.458 150 2.083 51 0.163 69 0.326 -48 17 0.461 149 1,963 49 0.175 68 0.312 -51 1.8 0.492 146 1,832 47 0.162 68 0.284 -57 Siemens Aktiengesellschaft 1026 : @ 4235605 0069124 038