BFT47 NJSEMI | Alldatasheet
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Technical content
L/-*ioaucti, line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN SILICON TRANSISTORS. EPITAXIAL PLANAR BFT 47 TRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX BFT 48 BFT 49 The NPN planar epitaxial trantlrtori BF 257, BF 258 and BF 259 ere intended for u«e in chrominance out- put nagei and luminance output itaga of colour tele- vision receiver*. LH tmulmn NPN pltmrtu illMum 8F 3SJ. 8F 2SS it BF 2S9 lent ptrticultinmtat dtttlati tux tattt at mtlt d* unfllflcmun frctimmimnci H, Vlt Sdtl'tmpHflaaurdl lumlntnc* dint In itctpmin <* iMrltha •» couhur. VCEO 160V to 300V C12a 2,5 pF to 30 V vCEtat 25V to 60mA *n\\j"Cj ^ Maximum power dissipation Dissipation oe puissance mtximttt Gate TO-39 - Sw outline drawing CB-7 on lait pagai Bo!tier Volr drum colt CB-7 dtrnltm ptgn IW) v \\0 100 150 JOO T^ Weight: 1 g. Collector it connected to ca*e ( oc) MttH LI colltatiir tit rmlU mi baTMfr ABSOLUTE RATINGS (LIMITING VALUES) j K-+25°C (Unlanothiiwiaaitatad) VALeURS LIMITES ABSOLUES O'UTILISATION •«* IStudndtaOmucaoinlHtl BFT 47 BFT 48 BFT 49 Collector-bate voltig* Trraion eaUtatur-bnt Emitter-bai* voltage CoHector-emittar voltage Collector current Court/it co/Hcttur Power dissipation T so »f. Oiulf»tion<tnxitatna caM °" Junction temperature Storage temperature Ttntftntan dt «ot**ji VCBO VEBO VCEO ptot TJ T*. 160 160 100 S 175 +176 250 250 100 175 -1-175 300 300 100 175 + 175 V V V mA W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
BFT47, BFT48, BFT49 STATIC CHARACTERISTICS CAPACTSRISTIQUES STATIOUES
- 25' C (Unlett otherwiu stated) tSauf indication! contr*in*l Collector-bate breakdown volugi Tuition <li clxfHfi «MMf»w-6eM Collector-emitter breakdown voltage Emitter-bate breakdown voltage Collector-bate cut-off currant Static forward current trintfer ratio VfHue rarigut * nppon & tmnftrt dlnct du couont Collactor-emitter taturation voltage fvufcii Of alum/on ceHtatur-tmmtvr Test conditions Condition* dm mw» lc - 100 M* IE -0 lc • 30 mA IB -o IE - 100 MA 'c -° vce> 100 v IE -o VCB.200V IE - 0 VCB> 250 V IE -o VCE-IOV lc «30mA lc - 30 mA lg »6 mA V(BR)CBO V(BR)CEO V(BR)EBO 'CBO "21E* VCE«t* BFT47 BFT48 BFT49 BFT47 BFT48 8FT49 BFT47 BFT48 BFT49 Win. Typ. Mix. 160 250 300 160 250 300 SO V V V V V V V nA nA nA V DYNAMIC CHARACTERISTICS (for small signals) CARACTERISTIOUES OYNAMIQUES (paurpttitl stonHix) Output capacitance dpfC/Udltarrlf Beveru trantfer capacitance CtpfcM dt trmftrt Imtnt Trantition frequency frtqufnti Ot tnntMon vCE-3ov ic -o VCE-30V lc -0 f - 500 kHz VCE-IOV Ig • 30 mA C22. C12. h 3,5 2,6 110 pP pF MHz THERMAL CHARACTERISTICS CARACTERISTIQUES THERMIQUES Junction-caia thermal ratiitanc* /HtHanct rAwmtoM tlenalan-boltllrl Rth(j-cl 17 25 "C/W j, Pulled !„ = 200^1 5 = 1% ImpuHom p