BFT12

BFT12 SIEMENS | Alldatasheet

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_25C D MM 4235605 0004701 9 MMSIEG ~ Tr3/-23 NPN Silicon RF Broadband Transistor BFT 12 . SIEMENS AKTIENGESELLSCHAF. 2. 0. — | BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to | TO 119 (50 B 3 DIN 41 867), intended for universal application in amplifiers up to the i GHz range, e. g. for broadband antenna amplifiers with a high output power and linearity \\ and for oscillators. i i i Type Ordering code sean? cia } Tepe ___, Ordering cove Tein + BFT 12 062702-F390 3 WN IL i ast 14 Lod | § 9x0282002 i Ki i : . € me : Approx. weight 0.3.9 Dimensions in mm : Maximum ratings i Collector-base-voltage Veao 25 v i Collector-emitter voltage Veo 15 v 1 Emitter-base voltage Veso 35 Vv { Collector current Ic 150 mA i Collector peak current (f > 1 MHz) Tons 300 mA Base current Is 50 mA : Junction temperature i 150 ie) Storage temperature range Tatg -65 to+125 | °C Total power dissipation (Tam = 66°C) Prot 700 mw . Thermal resistance - Juncition to ambient air") * Rinsa | $120 | KW . Junction to case Rinse s90 Kw 1) when mounted on glass fiber epoxy resin PCB 40 mm x 25 mm x 1 mm + peti . 747 ‘ 2078 B-Ol vs

25C D MM 6235605 GOO4702 O MMSIEG ~ : ©. €2€, 04702 OT F/- AB BFT 12 : /SIEMENS AKTIENGESELLSCHAF ————__ : Static characteristics (Tam = 25°C) 4 Collector-base breakdown voltage Viaricao >26 v : (cao = 100 uA) DC current gain (lc = 50 mA; Veg = 6 V) hee 225 - Dynamic characteristics (Tam) = 25°C) Transition frequency . Uc = 80 mA; Veg = 5 V; f = 200 MHz) fr 1.9 GHz Reverse transfer capacitance i (Uc = 5 mA; Veg = 10 V; f = 1 MHz) Ci20e 24 pF i Collector-base capacitance : (Vopo = 10 V; f = 1 MHz) Ccso 3 pF Power gain . {Ic = 40 mA; Veg = 7.5 V; f = 800 MHz; Rg = 60 Q) Goo 75 dB (le = 80 mA; Vce = 7.5 V; f = 800 MHz; Ry = 60.9) Goo 8 dB : Noise figure 3 - (Rg = 60 Q; Ie = 40 MA; Veg = 7.5 V; * f = 800 MHz) NF 65 dB H Output voltage” ' (cg = 80 MA; Veg = 7.5 V; f = 800 MHz; diy = 60 dB, Ry = Ri = 75 Q) Vo 1000 mV : S parameter at Veg = 7.5 V; Ic = 60 mA; Z, = 50 . t Site e Sate e Size e S220 ” (GHz) = 0,1 0,691 -170 14,199 | 94 0,022 55 0,208 -116 - 0,2 0,701 -177 7,261 | 85 0,038 68 0,160 -135, 0,3 0,717 177 4,860 | 78 0,053 70 0,151 -147 0,4 0,722 175 3,666 | 73 0,069 71 0,159 -148 0,5 0,715 173 2,909 | 67 0,083 72 0,168 -149 0.6 0,726 169 2,458 | 63 0,101 73 0,179 -148 0,7 0,738 167 2,102 | 59 0,116 72 0,192 -149 08 0,736 165 1,823 | 53 0,130 72 0,214 -149 0,9 0,740 163 1,619 | 49 0,146 71 0,240 -147 1 0,752 161 1,458 | 44 0,159 70 0,244 -148 1) three tone modulation f approx. 800 MHz 748 + tata,

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oe oe - -- 7 CT ~ ~ . 25¢ D MM 8235605 0004703 2 MMSIEG | i 25 = 3 -25C 04703 OTE H/F BFT12 - SIEMENS AKTIENGESELLSCHAF—-H————— Circuit example: Broadband RF amplifier i Thos Veclesnon 131 | Vcc . : - oe | BCY 58 { HET on [ jooe [foe 20008 Tne 1-600, ase : 2602 : i . SF "BD a9) i Operating point (set with R1): . Ic = 80 mA; VCE = 7.5 V. {At = 800 MHz and an intermodulation product distance of dim = 60 a8"), the i following values are obtained: 1 Output voltage Vo = 700 mV PoworgainGp = 848 i {refer to curve Gp =f () . 1) Twostoemmeultion f= 800 Me: f2= 804 Me j Oscillator diagram : {= GHa:L= 18 mm stip-hne . zo=508 t ! 2502 5 OOF be Or 200nK . F Dig 502 {ROS . Hi IH : ‘Ai0F 410F Faure! he : ‘2080 B-03 eee 48

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