BFS540 NJSEMI | Alldatasheet

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Technical content

, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN RF Transistor BFS540

DESCRIPTION

  • Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, lc = 10 mA, f = 900 MHz
  • High Current-Gain—Bandwidth Product fT= 9 GHz TYP. @VCE = 8 V, lc = 40 mA, f = 1 GHz

APPLICATIONS

  • Designed for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO lc PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature Range VALUE 2.5 120 0.5 175 -65-150 UNIT V V V mA W r SOT-323 package Tl l:Base a c j_ I 2-. Emitter 3; Collector DIM A B D H K M mm WIN 0. 30 1.15 2.00 MAX o. so 1.35 2. ;o 0.65 1.80 0.80 0.10 120 1. 00 0. 25 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified SYMBOL IcBO hFE ft COB Cre

1 S2ie I 2

Current-Gain—Bandwidth Product Output Capacitance Feedback Capacitance Insertion Power Gain Noise Figure Noise Figure Noise Figure CONDITIONS VCB= 8V; IE= 0 lc= 40mA ; VCE= 8V lc= 40mA ; VCE= 8V; f= 1GHz lE=0;VCB=8V;f=1MHz lc=0;VCB=8V;f=1MHz lc= 40mA ; VCE= 8V; f= 900MHz lc= 10mA ; VCE= 8V; f= 900MHz lc= 40mA ; VCE= 8V; f= 900MHz lo=10mA; VCE= 8V; f= 2GHz MIN TYP. g 0.9 0.6 1.3 1.9 2.1 MAX 0.05 250 1.8 2.4 UNIT uA GHz PF PF dB dB dB dB 40C =tot 30C :oc 10C \\E 1 5C 1DD 153Tc.:°Ci2DO Power derating curve 2CO hFE "5D

  • •CD /CE = 9 V: T = 25 1CT2 10-' 1 "C > DC current gain as a function of collector current