BFS483_13 INFINEON | Alldatasheet

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Technical content

Low Noise Silicon Bipolar RF Transistor

  • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
  • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
  • Two (galvanic) internal isolated Transistor in one package
  • For orientation in reel see package information below
  • Pb-free (RoHS compliant) and halogen-free package with visible leads
  • Qualification report according to AEC-Q101 available EHA07196 6 54 321 C1 E2 B2 C2E1B1 TR1 TR2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFS483 RHs 1=B 2=E 3=C 4=B 5=E 6=C SOT363

Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 mA Base current IB 5 Total power dissipation1) TS ≤ 40 °C Ptot 450 mW Junction temperature TJ 150 °C Ambient temperature TA -65 ... 150 Storage temperature TStg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 245 K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 15 mA, VCE = 8 V, pulse measured hFE 70 100 140 - 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)

Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 25 mA, VCE = 8 V, f = 500 MHz fT 6 8 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.34 0.54 pF Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.13 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 1.1 - Minimum noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz IC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz NFmin 0.9 1.4 dB Power gain, maximum stable1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Gms - 19 - dB Power gain, maximum available2) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gma - 12.5 - dB Transducer gain IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 1.8 MHz |S21e|2 15.5 dB 1Gms = |S21 / S12| 2Gma = |S21e / S12e| (k-(k²-1)1/2)

Total power dissipation Ptot = ƒ(TS) 0 20 40 60 80 100 120 °C 150 TS 100 150 200 250 300 350 400 mW 500 Ptot Permissible Pulse Load RthJS = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0. 1 0.05 0.2 0.1 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

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