BFS483 INFINEON | Alldatasheet

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Technical content

1 Jun-27-2001

/G01 For low-noise, high-gain broadband amplifier at collector currents from 2 mA to 28 mA /G01 fT = 8 GHz F = 1.2 dB at 900 MHz /G01 Two (galvanic) internal isolated Transistors in one package VPS05604 EHA07196 6 54 321 C1 E2 B2 C2E1B1 TR1 TR2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFS483 RHs 1=B 2=E 3=C 4=B 5=E 6=C SOT363 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 mA Base current IB 5 Total power dissipation TS /G01 40 °C 1) Ptot 450 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point2) R thJS /G01 245 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

2 Jun-27-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 15 mA, VCE = 8 V hFE 50 100 200 -

3 Jun-27-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics (verified by random sampling) Transition frequency IC = 25 mA, VCE = 8 V, f = 500 MHz fT 6 8 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 0.4 0.6 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce - 0.13 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 1 - Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz F 1.2 dB Power gain, maximum stable 1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Gms - 19 - Power gain, maximum available 2) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gma - 12.5 - Transducer gain IC = 15 mA, VCE = 8 V, ZS = ZL = 50/G02 , f = 900 MHz f = 1.8 GHz |S21e|2 9.5 1Gms = |S21 / S12|

4 Jun-27-2001

Total power dissipation Ptot = f (TS ) 0 20 40 60 80 100 120 °C 150 TS 100 150 200 250 300 350 400 mW 500 P tot Permissible Pulse Load R thJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0. 1 0.05 0.2 0.1 0.005 D = 0 Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

5 Jun-27-2001

Collector-base capacitance Ccb = f (VCB ) f = 1MHz 0 4 8 12 16 V 22 VCB 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 pF 1.0 C cb Transition frequency fT = f (IC) V CE = Parameter 0 10 20 30 40 50 60 mA 75 IC GHZ fT 8V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 10 20 30 40 50 60 mA 75 IC dB G 0.7V Power Gain G ma , Gms = f(IC) f = 1.8GHz VCE = Parameter 0 10 20 30 40 50 60 mA 75 IC dB G 0.7V

6 Jun-27-2001

Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50/G01 ) VCE = Parameter, f = 900MHz 0 4 8 12 16 20 24 28 32 mA 38 IC dBm IP3 Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 1 2 3 4 5 6 7 8 V 10 VCE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC =15mA Power Gain |S21|2= f(f) V CE = Parameter f dB S21 0.7V IC =15mA Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 0.7V IC=15mA