BFS480 SIEMENS | Alldatasheet

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Semiconductor Group 1 Dec-16-1996 BFS 480 NPN Silicon RF Transistor

  • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA
  • fT = 7GHz F = 1.5dB at 900MHz
  • Two (galvanic) internal isolated Transistors in one package ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFS 480 REs Q62702-F1531 1/4 = B 2/5 = E 3/6 = C SOT-363 data below is of a single transistor Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 8 V Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 10 mA Base current IB 1.2 Total power dissipation TS ≤ 112 °C Ptot mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 470 K/W 1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group 2 Dec-16-1996 BFS 480 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 8 - - V Collector-emitter cutoff current VCE = 10 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 8 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 3 mA, VCE = 5 V hFE 30 100 200

Semiconductor Group 3 Dec-16-1996 BFS 480 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 6 mA, VCE = 5 V, f = 500 MHz fT 5 7.5 - GHz Collector-base capacitance VCB = 5 V, f = 1 MHz C cb - 0.23 0.4 pF Collector-emitter capacitance VCE = 5 V, f = 1 MHz C ce - 0.1 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C eb - 0.23 - Noise figure IC = 1.5 mA, VCE = 5 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F 1.5 dB Power gain 1) IC = 3 mA, VCE = 5 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz G ms Transducer gain IC = 3 mA, VCE = 5 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz |S21e|2 9.5 1) G ms = |S21/S12|

Semiconductor Group 4 Dec-16-1996 BFS 480 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS mW 100 Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp 1 10 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 2 10 P totmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 5 Dec-16-1996 BFS 480 Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz 0 2 4 6 8 V 12 V R 0.00 0.05 0.10 0.15 0.20 0.25 0.30 pF 0.40 C cb Transition frequency fT = f (IC ) VCE = Parameter 0 2 4 6 8 mA 12 IC GHz fT 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 2 4 6 8 mA 12 IC dB G 0.7V Power Gain G ma , Gms = f(IC ) f = 1.8GHz VCE = Parameter 0 2 4 6 8 mA 12 IC dB G 0.7V

Semiconductor Group 6 Dec-16-1996 BFS 480 Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 1 2 3 4 5 6 7 8 V 10 V CE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC =3mA Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50Ω ) VCE = Parameter, f = 900MHz 0 2 4 6 8 mA 11 IC -14 -10 dBm IP3 Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 0.7V IC=3mA Power Gain |S21|2= f(f) VCE = Parameter f dB G 0.7V IC=3mA