BFS460L6 INFINEON | Alldatasheet

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Technical content

NPN Silicon RF TWIN Transistor

  • High fT of 22 GHz
  • For low voltage / low current applications
  • Ideal for VCO modules and low noise amplifiers
  • Low noise figure: 1.1 dB at 1.8 GHz
  • World's smallest SMD 6-pin leadless package
  • Excellent ESD performance
  • Built in 2 transistors (TR1, TR2: die as BFR460L3) * Short-term description /G54 /G52 /G31 /G54 /G52 /G32 /G31 /G32 /G33 /G34 /G35 /G36 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFS460L6 AB 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage TA > 0 °C TA ≤ 0 °C VCEO 4.5 4.2 V Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 50 mA Base current IB 5 Total power dissipation1) TS ≤ 104°C Ptot 200 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 1TS is measured on the collector lead at the soldering point to the pcb

Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 230 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 4.5 5.8 - V Collector-emitter cutoff current VCE = 15 V, VBE = 0 ICES - - 10 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 0.5 V, IC = 0 IEBO - - 1 µA DC current gain IC = 20 mA, VCE = 3 V, pulse measured hFE 90 120 160 - 1For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 3 V, f = 1 GHz fT 16 22 - GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, emitter grounded Ccb - 0.33 0.5 pF Collector emitter capacitance VCE = 3 V, f = 1 MHz, base grounded Cce - 0.17 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Ceb - 0.57 - Noise figure IC = 5 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz IC = 5 mA, VCE = 3 V, ZS = ZSopt, f = 3 GHz F 1.1 1.4 dB Power gain, maximum stable1) IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 3 GHz Gms 14.5 dB Transducer gain I C = 20 mA, VCE = 3 V, ZS = ZL = 50Ω, f = 1.8 GHz IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω, f = 3 GHz |S21e|2 12.5 Third order intercept point at output2) VCE = 3 V, IC = 20 mA, ZS = ZL = 50Ω, f = 1,8 GHz IP3 - 28 - dBm 1dB Compression point at output IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω , f = 1.8 GHz P-1dB - 12 - 1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz