BFS360L6 INFINEON | Alldatasheet
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/G01 Low voltage/ Low current operation /G01 For low noise amplifiers /G01 For Oscillators up to 3.5 GHz and Pout > 10 dBm /G01 Low noise figure: 1.0 dB at 1.8 GHz Built in 2 transitors ( TR1, TR2: die as BFR360L3) P-TSLP-6-1 /G54/G52 /G31 /G54/G52 /G32 /G31/G32 /G33 /G34 /G35 /G36 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFS360L6 FB 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 V Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 35 mA Base current IB 4 Total power dissipation1) TS /G01 101°C Ptot 210 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS /G01 230 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 6 9 - V Collector-emitter cutoff current VCE = 15 V, VBE = 0 ICES - - 10 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 15 mA, VCE = 3 V hFE 60 130 200 -
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 3 V, f = 1 GHz fT - 14 - GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, emitter grounded Ccb - 0.3 - pF Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Cce - 0.15 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Ceb - 0.43 - Noise figure IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 1,8 GHz IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 3 GHz Fmin 1.5 dB Power gain, maximum available1) IC = 15 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz IC = 15 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz Gma 14.5 Transducer gain I C = 15 mA, VCE = 3 V, ZS = ZL = 50/G02 , f = 1.8 GHz IC = 15 mA, VCE = 3 V, ZS = ZL = 50/G02 , f = 3 GHz |S21e|2 dB Third order intercept point at output2) VCE = 3 V, IC = 15 mA, f = 1.8 GHz, ZS = ZL = 50/G02 IP3 - 24 - dBm 1dB Compression point at output IC = 15 mA, VCE = 3 V, ZS = ZL = 50/G02 , f = 1.8 GHz P-1dB - 9 - 1Gma = |S21e / S12e| (k-(k²-1)1/2) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50/G01 from 0.1 MHz to 6 GHz