BFS22A NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 JL BFS22A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every tran- sistor Is tested under severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a TO-39 metal envelope with the collector connected to the case. QUICK REFERENCE DATA R.F. performance up to Tmt, » 25 °C in an unneutralized common-emitter class-B circuit mode of operation c.w. c.w. VCE V 13,5 12,5 f MHz 175 175 PL w GP dB > 8 typ.8 > 60 typ. 60 SI 3,9 + J2,2 VI mS 37 - j22 MECHANICAL DATA Fig.1 TO-39/1; collector connected to case. Dimensions in mm -»H
- «.,« - mm Maximum lead diameter is guaranteed only for 12,7 mm. Accessories: 56245 (distance disc). .Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice Int'nrmution lurrmhtd by NJ Somi-C unduclort n believed to he hold accurate ami reliable .it the lime of guing to press. However M - esptnuibility fat my errors or omissions discovered in its use M Scim-iuiKltiUi rs cr Fit vrrift 'h.M tt:iM-;ht'^t« ir^ . tirn'nt heriire nlncinv unf^n
V(BR)CBO > V(BR)CEO > V(BR)EBO > 36 V 18 V 4 V E E 0.5 mS 0.5 mS fT typ. 700 MHz typ. 15 pF < 20 pF -Cre typ. 11 pF V.H.F. power transistor CHARACTERISTICS Tj = 25°C unless otherwise specified Collector cut-off current IB a 0; VCE = 14V Breakdown voltages Collector -base voltage open emitter, Ic = 1 niA Collector -emitter voltage open base, Ic = 10 mA Emitter -base voltage open collector, IE = 1 niA Transient energy L = 25 mH; f = 50 Hz open base D. C. current gain Ic = 500 mA; VCE = 5 V Transition frequency IC = 350 mA; VCE = 10 V Collector capacitance at f = 1 MHz IE = Ie = 0; VcB = 15 V Feedback capacitance at f = 1 MHz 1C = 50 mA; VCE - IS V
RATINGS Limitiag values in accordance with the Absolute Maximum System (IEC 134) Collector -base voltage (open emitter) VcBOM max. 36 V peak value Collector -emitter voltage (open base) Emitter -base voltage (open collector) Collector current (average) Collector current (peak value) f > 1 MHz Total power dissipation up to (> 1 MHz = 25 °C PM (Wl 7.S 2.5 .short tlrtio_ operation V.,S.WR>3" k l P irmal op*i S.W.R.O ft v at VCE « 16-- 1 >1MHz V SO 100Tmb(°C) 150 Storage temperature Operating junction temperature THERMAL RESISTANCE From junction to mounting base From mounting base to heatsinfc with a boron nitride washer for electrical insulation VCEO VEBO rC(AV) ICM Ptot max. max. max. max. max. 0.75 2.25 7Z60973 V V A A W (AC) 0.7 0.6 0.5 OA 0.3 0.2 ni D.C.SOAR | v V L 5 6 7 8 9 10 Vce (V) 20 stg j-mb -65 to +200 °C max. 200 °C
22 K/W
Rthmb-h =