BFS18 SIEMENS | Alldatasheet
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_25C D MM 8235605 0004693 3 MMSIEG. NPN Silicon RF Transistors BFS 18 ea : BFS 18R ! SIEMENS AKTIENGESELLSCHAF © T= 31 ~/5 —6Fs 19 i BFS 19R j BFS 18 and BFS 19 are epitaxial NPN silicon planar transistors in TO 236 plastic package : (23-A 3 DIN 41869). These transistors were especially designed for use in RF circuits H in thick and thin film technology. For identification purposes, the transistors are marked : as follows: BFS 18 = “CA”; BFS 19 = “CB”; The transistors are also available upon { request with changed terminal sequence (emitter and base terminal interchanged) under : the designation BFS 18R (mark "CY") and BFS 19R (mark "CZ"). : i Type Mark Ordering code 20054 05 : “+ on 0015 i BFS 18 CA 062702-F348 E | 8 . BFS 19 cB 062702-F349 3 : BFS 18R cy Q62702-F687 gs BFS 19R cz 062702-F588 q at : Ofbtom | — 11.025, : 3.ays hao 5 Approx. weight 002g Dimensions in mm i i i BFS 18 : Maximum ratings BFS 19 i Collector-emitter voltage Vee0 20 v : Collector-base voltage Veao 30 v Emitter-base voltage Vego 5 v : Collector current Io 30 mA Junction temperature qi 125 °C ‘ Storage temperature range Tstg -65to+125 | °C Total power dissipation (Tgg < 65°C) Prot 150 mw . Thermal resistance Junction to ambient air Rinaa | 520 | Kw Junction to substrate back") Rinse 410 Kw 1) Caramic substrate 0.7 mm; 2.6 em? area sae anteeeontinmn 739
2070 A-07
a ce - powers e sa Se . nn 25C D MM 6235605 OOO4LT4 5 MMSIEG-- 25C 04694 0-7=3/-/5 BFS 18 ; F BFS 18R | — SIEMENS AKTIENGESELLSCHA BES 19 | BFS 19R i Static characteristics (Tamp = 25°C) BFS 18 BFS 19 l Collector-emitter breakdown voltage . i (ceo = 2 mA) Viericeo | >20 >20 Vv ' Collector cutoff current i (Vcpo = 20 V) Tego <100 <100 nA ' (Vego = 20 V; Tj = 100°C) Tego <10 <10 HA i Base-emitter voltage ' (Vce = 10 V; Ic = 1 mA) Vee 650 to 740 | 650 to 740 | mV DC current gain (Vee = 10 V; Io = 1 mA) ge 35to125 | 65t0225 | - i Dynamic characteristics (Tam» = 25°C) : Transition frequency . (Vcg = 10 V; Ig = 1 mA; f = 100 MHz) tr 200 260 MHz Reverse transfer capacitance (Voce = 10 V; Ic = 1 mA; f = 1 MHz) Ci2e 0.85 0.85 pF Collector-base capacitance (Vcp = 10 V; f = 1 MHz) CcBo 1 1 pF Noise figure (oe = 10 V; Ie = 1 mA; . \\ Rg = 100 Q; f = 100 MHz) NF 4 4 dB ' Total per power caspetion ereus temperature mW Pro = (1) t 200 t CoO REECE] . f se PEER ; CoCCACA EE : ECEEERAEEEEHH FECEGN Wut oh reco NAEP : EEEEEP AEE : COCOA ‘ COCcCCCC ACT i = FEEEEEEEE EEE : . COCCCCCCe NC i EERE ‘ EEEECeHLEN i 9 CCOCEEPPee rN] . 0 0 100 150 °C . —— lake 740 tear ere , . .