BFS17W INFINEON | Alldatasheet
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/G01 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA VSO05561 Type Marking Pin Configuration Package BFS17W MCs 1 = B 2 = E 3 = C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2.5 Collector current IC 25 mA Peak collector current, f = 10 MHz ICM 50 Total power dissipation TS /G01 93 °C 1) Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point2) R thJS /G01 205 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance
Electrical Characteristics a TA = 25°C, unless otherwise specified. Parameter Symbol UnitValues min. max.typ. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 - V- Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 25 V, IE = 0 ICBO µA 0.05 Emitter-base cutoff current VEB = 2.5 V, IC = 0 IEBO - 100- DC current gain IC = 2 mA, VCE = 1 V IC = 25 mA, VCE = 1 V hFE 150 Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA VCEsat - 0.1 0.4 V
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol UnitValues min. max.typ. AC characteristics Transition frequency IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz fT 1.3 1.4 2.5 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz Ccb 0.6- pF0.8 Collector-emitter capacitance VCE = 5 V, f = 1 MHz Cce 0.26 -- Input capacitance VEB = 0.5 V, IC = 0 , f = 1 MHz Cibo - -1.45 Output capacitance VCE = 5 V, VBE = 0 , f = 1 MHz Cobs - - 1.5 Noise figure IC = 2 mA, VCE = 5 V, f = 800 MHz, ZS = 0 /G01 F 3.5- dB5 Transducer gain IC = 20 mA, VCE = 5 V, ZS = ZL = 50/G01 , f = 500 MHz |S21e|2 12.7 -- Linear output voltage IC = 14 mA, VCE = 5 V, dim = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50/G01 V01=V02 - mV-100 Third order intercept point IC = 14 mA, VCE = 5 V, ZS = ZL = 50/G01 , f = 800 MHz IP3 - 23 - dBm
Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 120 160 200 240 mW 320 Ptot Permissible Pulse Load R thJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
Collector-base capacitance Ccb = f (VCB ) f = 1MHz 0 4 8 12 16 20 V 26 VCB 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 pF 1.3 C cb Transition frequency fT = f (IC) V CE = Parameter 0 5 10 15 20 mA 30 IC 0.0 0.5 1.0 1.5 2.0 GHz 3.0 fT 10V 0.7V