BFS17S

BFS17S SIEMENS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Semiconductor Group 1 Dec-18-1996 BFS 17S NPN Silicon RF Transistor

• For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration Package BFS 17S MCs Q62702-F1645 1/4=B1/B22/5=E1/E23/6=C2/C1 SOT-363 Maximum Ratings of any single Transistor Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2.5 Collector current IC 25 mA Peak collector current f ≥ 10 MHz ICM Total power dissipation TS ≤ 83 °C Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 240 K/W 1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm

Semiconductor Group 2 Dec-18-1996 BFS 17S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics of any single Transistor Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 - - V Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 25 V, IE = 0 ICBO 0.05 µA Emitter-base cutoff current VEB = 2.5 V, IC = 0 IEBO - - 100 DC current gain IC = 2 mA, VCE = 1 V IC = 25 mA, VCE = 1 V hFE 150 Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA VCEsat - 0.1 0.4 V

Semiconductor Group 3 Dec-18-1996 BFS 17S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics of any single Transistor Transition frequency IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz fT 1.3 2.5 1.4 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz C cb - 0.55 0.8 pF Collector-emitter capacitance VCE = 5 V, f = 1 MHz C ce - 0.13 - Input capacitance VEB = 0.5 V, IC = 0 , f = 1 MHz C ibo - 1.45 - Output capacitance VCE = 5 V, VBE = vbe = 0 , f = 1 MHz C obs - - 1.5 Noise figure IC = 2 mA, VCE = 5 V, f = 800 MHz ZS = 0 Ω F - 3.5 5 dB Transducer gain IC = 8 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.75 GHz |S21e|2 Linear output voltage IC = 14 mA, VCE = 5 V, dim = 60 dB f1 = 806 MHz, f2 = 810 MHz, ZS =ZL= 50 Ω V01=V02 - 100 - mV Third order intercept point IC = 200 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50 Ω IP3 - 23 - dBm

Semiconductor Group 4 Dec-18-1996 BFS 17S Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 100 150 200 mW 300 Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp -1 10 0 10 1 10 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 2 10 3 10 Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 5 Dec-18-1996 BFS 17S Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz 0 4 8 12 16 20 V 26 V CB 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 pF 1.3 C cb Transition frequency fT = f (IC ) VCE = Parameter 0 5 10 15 20 mA 30 IC 0.0 0.5 1.0 1.5 2.0 GHz 3.0 fT 10V 0.7V