BFR94A NJSEMI | Alldatasheet
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tSsmi-Gonau.cko'i iPioaucti, Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN 3.5 GHz wideband transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 378-8960 BFR94A
DESCRIPTION
NPN resistance-stabilized transistor in a SOT122E capstan envelope. It features extremely low cross modulation, intermodulation and second order intermodulation distortion. Due to Its high transition frequency, it has a high power gain, in conjunction with good wideband properties, and low noise up to high frequencies. It is primarily intended for CATV and MATV applications. The BFR94A is a replacement for the BFH94. The SOT122E footprint is similar to that of the SOT48, used fortheBFR94. QUICK REFERENCE DATA PINNING PIN Fig,1 SOT122E, SYMBOL VCBO VC60 fr F cL <** PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency noise figure intermodulation distortion second order intermodulation distortion CONDfTIONS open emitter open base uptoTe=145'5C;f>l MHz lc = 90 mA; VC6 - 20 V; f - 500 MHz; ^ = 25 "C I0 = 90 mA: VCE = 20 V; f = 200 MHz; T^,.2B-C lc = 90 mA; Vcj = 20 V; V0 = 60 dBmV; f^,, = 194.25 MHz lc = 90 mA; VCE = 20 V; V0 m 48 dBmV; fp + fq = 210 MHz TYP. 3.5 -63 MAX. 150 3.S -56 UNIT V V mA W GHz dB dB dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VOEO VCER VEBO lc ICM T-, PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter open base RBE- 100 £i open collector f > 1 MHz uptoTc=145°C;f>1 MHz MIN. -65 MAX. 35 I 150 300 3.5 200 200 UNIT V V V V mA mA W DC r^r- THERMAL RESISTANCE SYMBOL '"'ifll-C PARAMETER thermal resistance from junction to case THERMAL RESISTANCE 15K/W Quality Semi-Conductors
Tj = 25 "C unless otherwise specified. SYMBOL ICBO hfE fT Co GUM F dnn Vo PARAMETER collector cut-off currant DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance collector-stud capacitance maximum unilateral power gain (note 1) noise figure intermodulatlon distortion second order intermodulatlon distortion output voltage CONDITIONS IE = 0;VC8 = 20V I0 = 50 mA; VCE = 20 V lc=150mA;VOE = 20V lc - 90 mA; VeE = 20 V; f - 500 MHz lc=150mA;VOE = 20V; f- 500 MHz IE = I. - 0; VCB = 20 V; f = 1 MHz I0 = Ig - °; VEB - 0.6 V; f - 1 MHz lc - 10 mA; VOE = 20 V; f - 1 MHz f = 1 MHz lc = 90 mA; VOE = 20 V; f=500MHz;Tjmb=25°C lc = 90 mA; VOE - 20 V; lc = 90 mA; VOE = 20 V; f»500MHz;TBT,b = 25°C note 2 note 3 see Fig. 2 and note 4 MIN. TYP. 3.5 3.5 3.5 1.3 13.5 -63 700 MAX. -56 UNIT MA GHz GHz PF PF PF PF dB dB dB dB dB mV Notes 1. GUM is ths maximum unilateral power gain, assuming S12 is zero and GUM = 10 log • 2. I0 = 90 mA; VCE = 20 V; RL » 75 fl; Vp = V0 = 60 dBmV at fp - 1 96.25 MHz; V, = V0 -6 dB at f, = 203.25 MHz; Vr = V0 -6 dB at f, * 205.25 MHz; measured at f(pH^ = 194.25 MHz. - foi,!' > (i - dB. 3. lc = 90 mA; VCB = 20 V; fp = 66 MHz; fq = 144 MHz; f,, 4- f, = 210 MHz; Vo » 48 dBmV. 4. d^ = -60 dB (DIN 45004B); lc - 90 mA; VCE - 20 V; RL « 75 O; T,^ = 25 °C; Vp = V0 at dh, * -60 dB; fp = 495.25 MHz; V, - V0 -« dB; f, - 503.25 MHz; Vr - V0 -6 dB; f, = 505.25 MHz; measured at fIMUt = 493.25 MHz.