BFR949F INFINEON | Alldatasheet

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Technical content

/G01/G02 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA /G01 f T = 9 GHz F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR949F RKs 1 = B 2 = E 3 = C TSFP-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 10 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 1.5 Collector current IC 35 mA Base current IB 4 Total power dissipation1) TS /G01 93°C Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS /G03/G02 225 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics

Parameter Symbol Values Unit min. typ. max. Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 10 - - V Collector-emitter cutoff current VCE = 20 , VBE = 0 V ICES - - 100 µA Collector -base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 0.1 µA DC current gain- IC = 5 mA, VCE = 6 V hFE 100 140 200 -

Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 15 mA, VCE = 6 V, f = 1 GHz fT 7 9 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = vbe = 0 Ccb - 0.3 - pF Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = vbe = 0 Cce - 0.2 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = vcb = 0 Ceb - 0.7 - Noise figure IC = 5 mA, VCE = 6 V, ZS = ZSopt , f = 1 GHz IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz F 1.5 2.5 dB Power gain1) IC = 10 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt, f = 900 MHz Gms - 21 - - Power gain, maximum available1) IC = 10 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Gma - 15.5 - dB Transducer gain IC = 15 mA, VCE = 6 V, ZS = ZL = 50/G04 , f = 1 GHz IC = 10 mA, VCE = 8 V, ZS = ZL = 50/G04 , f = 1.8 GHz |S21e|2 dB

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: BF = 120 - IKF = 0.152 mA BR = 33.322 - IKR = 0.063 A RB = 20.766 /G01 RE = 0.101 - VJE = 0.568 V XTF = 0.00894 - PTF = 0 deg MJC = 0.334 - CJS = 0 fF NK = 0.5 - FC = 0.924 NF = 1.085 - ISE = 1.86 pF NR = 1.095 - ISC = 3.68 pA IRB = 72.2 mA RC = 0.849 /G01 MJE = 0.456 - VTF = 0.198 V CJC = 459 fF XCJC = 0.217 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K IS = 4.36 fA VAF = 30 V NE = 1.998 - VAR = 41.889 V NC = 1.569 - RBM = 0.823 /G01 CJE = 291 fF TF = 8.77 ps ITF = 1.336 mA VJC = 1.048 V TR = 1.39 ns MJS = 0- . - - All parameters are ready to use, no scalling is necessery. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: L1 = 0.556 nH L2 = 0.657 nH L3 = 0.381 nH C1 = 43 fF C2 = 123 fF C3 = 66 fF C4 = 10 fF C5 = 36 fF C6 = 47 fF EHA07524 Transistor C’ L B’ 3 CChip E L 1 B C2 C3 Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes