BFR93P

BFR93P SIEMENS | Alldatasheet

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Technical content

NPN Silicon RF Transistor BFR 93P ESD :Electrostaticdischarge sensitive device, observe handling precautions! Maximum Ratings Type Marking Package 1)Pin Configuration BFR 93P Q62702-F1051GG SOT-23 1 2 3 B E C Ordering Code (tape and reel) Parameter Symbol Values Unit Collector-emitter voltage VCE0 15 V Emitter-base voltage VEB0 2.5 Collector current IC 50 mA Collector-base voltage VCB0 20 Base current IB 10 Junction temperature Tj 150 ˚C Ambient temperature range TA – 65 … + 150 Total power dissipation,TS £ 65 ˚C3) Ptot 280 mW Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA £ 385 K/W Junction - soldering point3) Rth JS £ 305 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm· 16.7 mm · 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. l For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. l CECC-type available: CECC 50002/256.

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. DC Characteristics VCollector-emitter breakdown voltage IC = 1 mA,IB = 0 V(BR)CE0 15 – – Emitter-base cutoff current VEB = 2.5 V,IC = 0 IEB0 – – 100 –DC current gain IC = 25 mA,VCE = 5 V hFE 30 100 – mACollector-base cutoff current VCB = 10 V,IE = 0 VCB = 20 V,IE = 0 ICB0 0.05 VCollector-emitter saturation voltage IC = 50 mA,IB = 5 mA VCEsat – 0.2 0.5

atTA = 25 ˚C, unless otherwise specified. AC Characteristics UnitValuesParameter Symbol min. typ. max. Power gain IC = 25 mA,VCE = 8 V,f = 800 MHz, ZS =ZSopt, ZL =ZLopt G pe –1 3 – GHzTransition frequency IC = 30 mA,VCE = 5 V,f = 200 MHz IC = 50 mA,VCE = 5 V,f = 200 MHz fT 4.7 Collector-emitter capacitance VCE = 10 V,VBE =vbe = 0,f = 1 MHz C ce – 0.28 – Output capacitance VCE = 10 V,VBE =vbe = 0,f = 1 MHz C obs – 0.9 – dBNoise figure IC = 10 mA,VCE = 8 V,f = 10 MHz,ZS = 75W IC = 5 mA,VCE = 8 V,f = 500 MHz,ZS =ZSopt IC = 10 mA,VCE = 8 V,f = 800 MHz,ZS = 50W F 1.7 1.9 2.4 pFCollector-base capacitance V CB = 10 V,VBE =vbe = 0,f = 1 MHz C cb – 0.6 0.75 Input capacitance VEB = 0.5 V,IC =ic = 0,f = 1 MHz C ibo – 2.1 – Transducer gain IC = 25 mA,VCE = 8 V,f = 500 MHz,Z0 = 50W IS21e I2 – 15.8 – mVLinear output voltage two-tone intermodulation test I C = 25 mA,VCE = 8 V,dIM = 60 dB, f1 = 806 MHz,f2 = 810 MHz,ZS =ZL = 50W Vo1 =Vo2 – 240 – dBmThird order intercept point IC = 25 mA,VCE = 8 V,f = 800 MHz IP3 – 30.5 –

Total power dissipationPtot =f (TA *;TS) * Package mounted on alumina Collector-base capacitanceC cb =f (V CB ) VBE =vbe = 0,f = 1 MHz Transition frequencyfT =f (IC ) VCE = 5 V,f = 200 MHz

Noise figureF =f (ZS) VCE = 8 V,f = 10 MHz Common Emitter Noise Parameters f Gopt GHz dB dB MAG ANG W –d B d B F min G p(F min) R N NF 50 W G p(F 50W ) IC = 2 mA,VCE = 8 V,Z0 = 50W IC = 10 mA,VCE = 8 V,Z0 = 50W 0.01 0.8 1.5 2.3 (ZS = 90W ) (ZS =ZSopt) 1.7 2.4 Noise figureF =f (IC ) VCE = 8 V,f = 800 MHz,ZLopt (G )

Common Emitter S Parameters fS 11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.3 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.74 0.51 0.40 0.32 0.31 0.31 0.31 0.32 0.33 0.35 – 34 – 92 – 125 – 157 – 171 177 166 156 146 137 12.96 7.50 5.13 3.35 2.71 2.32 2.05 1.84 1.64 1.52 143 113 0.03 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.87 0.65 0.54 0.48 0.48 0.46 0.45 0.45 0.45 0.44 – 14 – 31 – 33 – 32 – 35 – 38 – 41 – 46 – 49 – 52 IC = 5 mA,VCE = 8 V,Z0 = 50W S11,S22 =f (f) IC = 5 mA,VCE = 8 V,Z0 = 50W S12,S21 =f (f) IC = 5 mA,VCE = 8 V,Z0 = 50W

Common Emitter S Parameters (continued) fS 11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.3 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.58 0.37 0.30 0.25 0.25 0.26 0.26 0.28 0.29 0.31 – 49 – 108 – 139 – 170 180 169 160 151 142 133 18.73 9.17 5.92 3.85 3.09 2.63 2.33 2.07 1.84 1.72 133 105 0.03 0.05 0.07 0.10 0.13 0.15 0.17 0.20 0.22 0.24 0.77 0.53 0.45 0.41 0.40 0.39 0.38 0.38 0.38 0.36 – 19 – 32 – 32 – 31 – 34 – 37 – 40 – 44 – 47 – 49 IC = 10 mA,VCE = 8 V,Z0 = 50W S11,S22 =f (f) IC = 10 mA,VCE = 8 V,Z0 = 50W S12,S21 =f (f) IC = 10 mA,VCE = 8 V,Z0 = 50W

Common Emitter S Parameters (continued) fS 11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.3 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.41 0.28 0.25 0.23 0.23 0.25 0.25 0.27 0.28 0.30 – 64 – 123 – 151 – 179 172 164 155 147 139 131 22.91 9.89 6.24 4.03 3.22 2.74 2.41 2.14 1.92 1.79 123 0.02 0.05 0.07 0.11 0.13 0.16 0.18 0.20 0.23 0.25 0.67 0.46 0.40 0.37 0.37 0.35 0.35 0.35 0.35 0.33 – 22 – 30 – 30 – 28 – 32 – 35 – 38 – 43 – 46 – 48 IC = 20 mA,VCE = 8 V,Z0 = 50W S11,S22 =f (f) IC = 20 mA,VCE = 8 V,Z0 = 50W S12,S21 =f (f) IC = 20 mA,VCE = 8 V,Z0 = 50W

Common Emitter S Parameters (continued) fS 11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.3 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.37 0.26 0.24 0.22 0.23 0.24 0.25 0.27 0.28 0.30 – 68 – 127 – 154 179 170 162 153 146 138 130 23.71 9.89 6.20 3.98 3.18 2.71 2.37 2.11 1.89 1.77 120 0.02 0.05 0.07 0.11 0.13 0.16 0.18 0.20 0.23 0.25 0.64 0.44 0.39 0.37 0.37 0.36 0.36 0.35 0.35 0.34 – 22 – 29 – 28 – 27 – 31 – 35 – 37 – 42 – 46 – 48 IC = 25 mA,VCE = 8 V,Z0 = 50W S11,S22 =f (f) IC = 25 mA,VCE = 8 V,Z0 = 50W S12,S21 =f (f) IC = 25 mA,VCE = 8 V,Z0 = 50W