BFR93AW

BFR93AW SIEMENS | Alldatasheet

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Semiconductor Group 1 Dec-11-1996 BFR 93AW NPN Silicon RF Transistor

• For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 93AW R2s Q62702-F1489 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 50 mA Base current IB 6 Total power dissipation TS ≤ 104 °C Ptot 300 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 155 K/W 1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group 2 Dec-11-1996 BFR 93AW Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 2 V, IC = 0 IEBO - - 10 µA DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200

Semiconductor Group 3 Dec-11-1996 BFR 93AW Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 30 mA, VCE = 8 V, f = 500 MHz fT 4.5 6 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz C cb - 0.62 0.9 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz C ce - 0.28 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C eb - 1.7 - Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F 3.3 dB Power gain 2) IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz G ma Transducer gain IC = 30 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz |S21e|2 7.5

Semiconductor Group 4 Dec-11-1996 BFR 93AW SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 8.6752 fA VAF = 20.011 V NE = 1.5466 - VAR = 26.834 V NC = 1.95 - RBM = 3.4649 Ω CJE = 3.1538 fF TF = 33.388 ps ITF = 2.5184 mA VJC = 0.72744 V TR = 1.1061 ns MJS = 0- XTI = 3- BF = 137.63 - IKF = 0.33395 A BR = 59 - IKR = 0.015129 A RB = 7.2326 Ω RE = 1.0075 Ω VJE = 0.70393 V XTF = 0.28319 - PTF = 0 deg MJC = 0.34565 - CJS = 0 fF XTB = 0 - FC = 0.75935 - NF = 0.93633 - ISE = 2619.3 fA NR = 0.88761 - ISC = 0.70823 fA IRB = 0.043806 mA RC = 0.13193 Ω MJE = 0.5071 - VTF = 0.17765 V CJC = 1039.5 fF XCJC = 0.21422 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: LBI = 0.57 nH LBO = 0.4 nH LEI = 0.43 nH LEO = 0.5 nH LCI = 0n H LCO = 0.41 nH CBE = 61 fF CCB = 101 fF CCE = 175 fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm

Semiconductor Group 5 Dec-11-1996 BFR 93AW Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 100 150 200 250 300 mW 400 Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp 0 10 1 10 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 2 10 - Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 6 Dec-11-1996 BFR 93AW Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz 0 4 8 12 16 V 24 V R 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 pF 1.1 C cb Transition frequency fT = f (IC ) VCE = Parameter 0 10 20 30 40 mA 60 IC 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 GHz 7.0 fT 10V 8V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 10 20 30 40 mA 60 IC dB G 10V 5V 0.7V Power Gain G ma , Gms = f(IC ) f = 1.8GHz VCE = Parameter 0 10 20 30 40 mA 60 IC dB G 10V 0.7V

Semiconductor Group 7 Dec-11-1996 BFR 93AW Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 V CE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC =30mA Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50Ω ) VCE = Parameter, f = 900MHz 0 10 20 30 40 mA 60 IC dBm IP3 5V Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7V IC =30mA Power Gain |S21|2= f(f) VCE = Parameter f dB S21 10V 0.7V IC =30mA