BFR93AW NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
I , (i nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN RF Transistor BFR93AW
DESCRIPTION
- High Power Gain
- High Current Gain Bandwidth Product
- Low Noise Figure
APPLICATIONS
- Designed for use in RF amplifiers .mixers and oscillators with signal frequencies up to 1 GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @TC=25°C Junction Temperature Storage Temperature Range VALUE 0.3 175 -65~150 UNIT V V V mA W SOT-323 package H , h-A
- Mil t t I l:Base Marking 3 c -. ,_ . i i -I: Emitter U ' j U _L 3: Collector I ^.D* |_G— ^ / \\p rn / ,K IT Tl L
1 I 1 1 1 —*- 1 1 | I—
A B C H K M mm WIN MAX 0. 30 0. 50 1, 15 i. 35 2.00 -. -0 0. 65 1.80 2.20 0. 80 i. 00 0. 10 0. 25 M NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no1 responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Qualify Semi-Conductors
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL ICBO hFE fr COB Cre NF NF PARAMETER Collector Cutoff Current DC Current Gain Current-Gain — Bandwidth Product Output Capacitance Feedback Frequency Noise Figure Noise Figure CONDITIONS VCB= 5V; IE= 0 lc= 30mA ; VCE= 5V lc= 30mA ; VCE= 5V; f= 500MHz lE=0;VCB=5V;f=1MHz |E=0;VCB=5V;f=1MHz lc=5mA;VCE=8V;f=1GHz lc= 5mA ; VCE= 8V; f= 2GHz MIN TYP. 0.7 0.6 1.5 2.1 MAX 0.05 UNIT uA GHz PF PF dB dB 400 ptot (mW) 300 200 100 50 100 150 Q 200 Power derating curve TS ( C) hFE 5 V 0 10 20 ic (mA) 30 DC current gain as a function of collector current; typical values