BFR93A_14 INFINEON | Alldatasheet

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Low Noise Silicon Bipolar RF Transistor

  • For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA
  • Pb-free (RoHS compliant) package
  • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR93A R2s 1=B 2=E 3=C SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 90 mA Base current IB 9 Total power dissipation1) TS ≤ 111 °C Ptot 300 mW Junction temperature TJ 150 °C Storage temperature TStg -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 130 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)

Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 2.5 V, IC = 0 IEBO - - 10 µA DC current gain IC = 30 mA, VCE = 8 V, pulse measured hFE 70 100 140 -

Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 8 V, f = 500 MHz fT 4.5 6 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.54 0.8 pF Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.25 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 1.9 - Minimum noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz f = 1.8 GHz NFmin 1.5 2.6 dB Power gain, maximum available1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz f = 1.8 GHz Gma 14.5 9.5 Transducer gain I C = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz f = 1.8 MHz |S21e|2 12.5 dB Third order intercept point at output2) IC = 30mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz IP3 - 15 - dBm 1dB Compression point IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz P-1dB - 6 - 1Gma = |S21e / S12e| (k-(k²-1)1/2) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.2 MHz to 12 GHz

Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 100 150 200 250 mW 350 Ptot

81726 Munich, Germany

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