BFR90A NJSEMI | Alldatasheet
Document overview
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Technical content
Features
- High power gain
- Low noise figure
- High transition frequency 94 93(18 BFR90A Marking: BFR90A Plastic case (TO 50) 1 = Collector, 2= Emitter; 3= Base Absolute Maximum Ratings
- . .Parameters'.:':' ,: : :: : Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tarn(, < 60°C Junction temperature Storage temperature range Symbol VCBO VCEO VKBO Plot Ti Tstg Value 300 150 -65 to +150 Unit V V V mA mW Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (40 x 25 x 1 5) mm3 plated with 35 u.m Cu Symbol RlhJA Value 300 Unit K./W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. " N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Electrical DC Characteristics TJ = 25°C, unless otherwise specified Parameters / Test Conditions Collector-emitter cut-off current VCE = 20 V, VBE = 0 Collector-base cut-ofl' current VCB= 15 V, IE=0 Emitter-base cut-off current ; VEB = 2V,IC = 0 Collector-emitter breakdown voltage lc = 1 mA, IB = O DC forward current transfer ratio VCE= 10 V, Ic= 14mA Symbol ICES ICBO IEBO VjBRlCEO hFE Min. IS 100 :•" Max. 100 100 150 Unit |1A nA uA V Electrical AC Characteristics Tamb = 25°C Parameters / Test Conditions Transition frequency VCE= 10 V, Ic= !4mA,f=500MHz Collector-emitter capacitance VCE=10 V, f=l MHz Collector-base capacitance VCB=10 V, f= 1 MHz Emitter-base capacitance VEB = 0.5 V,f = 1 MHz Noise figure VCii = 10 V, Ic = 2 mA, f = 800 MHz, Zs = 50 Q Power gain VCE = 1 0 V, Ic = 1 4 mA, ZL = ZLopt, f = 800 MHz Linear output voltage - two tone intermodulation test VCF = 10 V, Ic = 14 mA, d[M = 60 dB, ZS = ZL = 50 Q, fi = 806 MHz, f2 = 810 MHz Third order intercept point VCE = 10 V, IC = 14 mA, f = 800 MHz Symbol fr c *-ce Ccb ceh F GBe V, = V2 IPs Min. Typ. 0.25 0.3 0.9 1.8 120 Max. Unit GHz PF PF PF dB dB mV dBm