BFR705L3RH INFINEON | Alldatasheet
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Technical content
NPN Silicon Germanium RF Transistor*
- High gain ultra low noise RF transistor for low current operation
- Ideal for low power consumption LNA design
- Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more
- Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.8 dB at 6 GHz
- High maximum stable and available gain at only 7mA Gms = 25 dB at 1.8 GHz, Gma = 18 dB at 6 GHz
- 150 GHz fT-Silicon Germanium technology
- Extremely small and flat leadless package, height 0.32 mm max.
- Pb-free (RoHS compliant) package1)
- Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR705L3RH R1 1=B 2=C 3=E TSLP-3-9 1Pb-containing package may be available upon special request
Parameter Symbol Value Unit Collector-emitter voltage TA > 0°C TA ≤ 0°C VCEO 3.5 V Collector-emitter voltage VCES 13 Collector-base voltage VCBO 13 Emitter-base voltage VEBO 1.2 Collector current IC 10 mA Base current IB 1 Total power dissipation1), TS ≤ 123 °C Ptot 40 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 665 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 4 4.7 - V Collector-emitter cutoff current VCE = 13 V, VBE = 0 ICES - - 30 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 0.5 V, IC = 0 IEBO - - 1 µA DC current gain IC = 7 mA, VCE = 3 V, pulse measured hFE 160 250 400 - 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 7 mA, VCE = 3 V, f = 1 GHz fT - 39 - GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.04 0.08 pF Collector emitter capacitance VCE = 3 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.15 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 0.18 - Noise figure IC = 3 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 3 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt F 0.5 0.8 dB Power gain, maximum stable1) IC = 7 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gms - 25 - dB Power gain, maximum available1) IC = 7 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz Gma - 18 - dB Transducer gain IC = 7 mA, VCE = 3 V, ZS = ZL = 50 Ω , f = 1.8 GHz f = 6 GHz |S21e|2 dB 1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 135 150 TS [°C] Ptot [mW] Permissible Puls Load RthJS = ƒ (tp) tp [s] R thJS [K/W] D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = 0 → tp ← ←→ T D=tp /T Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) tp [s] Ptotmax/PtotDC D = 0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 → tp ← ←→ T D=tp /T Collector-base capacitance Ccb = ƒ (VCB) f = 1 MHz 0 2 4 6 8 10 12 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 VCB [V] C cb [pF]
Transition frequency fT = ƒ(IC) VCE = parameter, f = 1 GHz 0 2 4 6 8 10 12 IC [mA] fT [GHz] 0.50V 0.75V 1.00V 2V to 4V Power gain Gma, Gms = ƒ (f) VCE = 2 V, IC = 7 mA 0 1 2 3 4 5 6 f [GHz] G [dB] G ms |S21|2 Power gain Gma, Gms = ƒ (IC) VCE = 3 V f = parameter 0 2 4 6 8 10 12 IC [mA] G [dB] 6.00GHz 5.00GHz 4.00GHz 3.00GHz 2.40GHz 1.80GHz 0.90GHz Power gain Gma, Gms = ƒ (VCE) IC = 7 mA f = parameter VCE [V] G [dB] 6.00GHz 5.00GHz 4.00GHz 3.00GHz 2.40GHz 1.80GHz 0.90GHz
BFR705L3RHPackage TSLP-3-9 Package Outline Foot Print Marking Layout (Example) Pin 1 Top view Bottom view 2 1 ±0.0350.5 0.575 ±0.0350.4 1) ±0.0352x 0.25 1) 0.35 ±0.0352x0.15 1) marking 1) Dimension applies to plated terminal 0.31-0.02 +0.01 ±0.05 ±0.05 ±0.051 0.6±0.05 Reel ø180 mm = 15.000 Pieces/Reel Standard Packing BFR705L3RH Type code Pin 1 marking Laser marking 0.8 1.2 0.35 Pin 1 marking For board assembly information please refer to Infineon website "Packages" Stencil aperturesCopper Solder mask 0.38 0.2 0.315 0.95 0.5 0.17 0.255 0.2 0.45 0.225 1 0.6 0.225 0.15 0.35 0.2 R0.1 R0.19
81726 München, Germany
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