BFR460L3 INFINEON | Alldatasheet

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/G01 For low voltage / low current applications /G01 Ideal for VCO modules and low noise amplifiers /G01 Low noise figure: 1.1 dB at 1.8 GHz /G01 World's smallest SMD leadless package /G01 Excellent ESD performance (>1500V HBM) /G01 High fT of 22 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR460L3 AB 1 = B 2 = E 3 = C TSLP-3-1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 4.5 V Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 50 mA Base current IB 5 Total power dissipation1)2) TS /G01 108°C Ptot 200 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point3) RthJS /G01 210 K/W 1Ptot due to Maximum Ratings 2TS is measured on the collector lead at the soldering point to the pcb 3For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 4.5 5 - V Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 0,5 V, IC = 0 IEBO - - 1 µA DC current gain IC = 20 mA, VCE = 3 V hFE 50 130 200 -

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 3 V, f = 1 GHz fT 16 22 - GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, emitter grounded Ccb - 0.3 0.45 pF Collector emitter capacitance VCE = 3 V, f = 1 MHz, base grounded Cce - 0.14 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Ceb - 0.55 - Noise figure IC = 5 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz IC = 5 mA, VCE = 3 V, ZS = ZSopt , f = 3 GHz F 1.1 1.35 dB Power gain, maximum stable1) IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz Gms - 16.0 - dB Power gain, maximum available1) IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 3 GHz Gma - 11 - dB Transducer gain IC = 20 mA, VCE = 3 V, ZS = ZL = 50/G02 , f = 1,8 GHz IC = 20 mA, VCE = 3 V, ZS = ZL = 50/G02 , f = 3 GHz |S21e|2 dB Third order intercept point at output2) VCE = 3 V, IC = 20 mA, f = 1.8 GHz IP3 - 27 - dBm 1dB Compression point at output IC = 20 mA, VCE = 3 V, f = 1.8 GHz P-1dB - 11.5 - 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50/G02 from 0.1 MHz to 6 GHz

Collector-base capacitance Ccb= /G03 (VCB) f = 1MHz 0 2 4 6 8 10 V 14 VCB 0.1 0.2 0.3 0.4 0.5 0.6 pF 0.8 Ccb Transition frequency fT= /G03 (IC) f = 1 GHz VCE = parameter in V 0 5 10 15 20 25 30 35 mA 45 IC GHz fT 2 to 4V Power gain Gma, Gms, |S21|2 = /G03 (f) VCE = 3 V, IC = 20 mA 0 1 2 3 4 GHz 6 f dB G Gms Gma |S21|² Power gain Gma, Gms = /G03 (IC) VCE = 3V f = parameter in GHz 0 5 10 15 20 25 30 mA 40 IC dB G 0.9 1.8 2.4

Power gain Gma, Gms = /G03 (VCE) IC = 20 mA f = parameter in GHz VCE dB G 0.9 1.8 2.4