BFR360L3_07 INFINEON | Alldatasheet

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Technical content

NPN Silicon RF Transistor*

  • Low voltage/ Low current operation
  • For low noise amplifiers
  • For Oscillators up to 3.5 GHz and Pout > 10 dBm
  • Low noise figure: 1.0 dB at 1.8 GHz
  • Pb-free (RoHS compliant) package1)
  • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR360L3 FB 1 = B 2 = E 3 = C TSLP-3-1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 V Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 35 mA Base current IB 4 Total power dissipation2) TS ≤ 104°C Ptot 210 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point3) RthJS ≤ 220 K/W 1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb 3For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 6 9 - V Collector-emitter cutoff current VCE = 15 V, VBE = 0 ICES - - 10 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain- IC = 15 mA, VCE = 3 V, pulse measured hFE 90 120 160 -

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 3 V, f = 1 GHz fT 11 14 - GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.26 0.4 pF Collector emitter capacitance VCE = 5 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.15 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 0.42 - Noise figure IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 3 GHz Fmin 1.3 dB Power gain, maximum available1) IC = 15 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz IC = 15 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 3 GHz Gma 11.5 Transducer gain I C = 15 mA, VCE = 3 V, ZS = ZL = 50Ω , f = 1.8 GHz f = 3 GHz |S21e|2 13.5 dB Third order intercept point at output2) VCE = 3 V, IC = 15 mA, ZS=ZL=50 Ω , f = 1.8 GHz IP3 - 24 - dBm 1dB Compression point at output IC = 15 mA, VCE = 3 V, ZS=ZL=50 Ω , f = 1.8 GHz P-1dB - 9 - 1Gma = |S21e / S12e| (k-(k²-1)1/2) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: NF = 1- ISE = 150 fA NR = 1- ISC = 20 fA IRB = 74 µA RC = 0.35 Ω MJE = 0.5 - VTF = 0.198 V CJC = 473 fF XCJC = 0.129 - VJS = 0.75 V EG = 1.11 eV NK = 0.5 K BF = 147 - IKF = 77.28 mA BR = 6 - IKR = 0.3 A RB = 0.1 Ω RE = 78.2 m Ω VJE = 1.3 V XTF = 0.115 - PTF = 0 deg MJC = 0.486 - CJS = 0 fF XTB = 0 - FC = 0.954 KF = 1E-14 IS = 0.0689 fA VAF = 20 V NE = 2.4 - VAR = 60 V NC = 1.4 - RBM = 7.31 Ω CJE = 400 fF TF = 9.219 ps ITF = 1.336 mA VJC = 0.864 V TR = 1.92 ns MJS = 0- XTI = 0 - AF = 1 - All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: L1 = 0.575 nH L2 = 0.575 nH L3 = 0.275 nH C1 = 33 fF C2 = 28 fF C3 = 131 fF C4 = 8 fF C5 = 8 fF C6 = 24 fF C7 = 300 fF R1 = 204 Ω EHA07536 Transistor C’ L B’ 3 CChip E L 1 B C 6 C 1 C 2 C 3 C 7 R 1 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com Valid up to 6GHz

Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 120 150 180 mW 240 Ptot Permissible Pulse Load RthJS = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 k/WRthJS D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 0 2 4 6 8 10 12 V 16 VCB 0.1 0.2 0.3 0.4 0.5 0.6 pF 0.8 Ccb

Third order Intercept Point IP3=ƒ(IC) (Output, ZS=ZL=50Ω ) VCE = parameter, f = 1.8 GHz 0 5 10 15 20 25 30 mA 40 IC dBm IP3 Transition frequency fT= ƒ(IC) f = 1 GHz VCE = parameter 0 5 10 15 20 25 30 A 40 IC GHz fT 0.7V Power gain Gma, Gms = ƒ(IC) VCE = 3 V f = parameter in GHz 0 5 10 15 20 25 30 35 dB 45 IC dB G 0.9GHz 1.8GHz 2.4GHz 3GHz 4GHz Power gain Gma, Gms = ƒ(IC) f = 1.8GHz VCE = parameter 0 5 10 15 20 25 30 mA 40 IC dB G 0.7V

Power Gain Gma, Gms = ƒ(f) VCE = parameter 0 1 2 3 4 GHz 6 f dB G Ic=15mA 0.7V Power Gain |S21|² = ƒ(f) VCE = parameter 0 1 2 3 4 GHz 6 f dB |S21| -2 Ic = 15mA 0.7V Power Gain Gma, Gms = ƒ(VCE): f = parameter 0 1 2 3 4 V 6 VCE dB G 0.9GHz 1.8GHz 2.4GHz 3GHz 4GHz Ic = 15mA

0.4+0.1 BFR193L3 Type code Pin 1 marking Laser marking 0.76 1.16 0.5 Pin 1 marking Reel ø180 mm = 15.000 Pieces/Reel For board assembly information please refer to Infineon website "Packages" Package Outline Foot Print Marking Layout (Example) Standard Packing Stencil aperturesCopper Solder mask 0.275 0.2 0.315 0.945 0.45 0.17 0.355 0.2 0.35 0.225 1 0.6 0.225 0.15 0.35 0.3 R0.1 ±0.050.35 ±0.0352x0.15 1) Top view Bottom view 1) Dimension applies to plated terminal ±0.0350.5 1) ±0.050.6 ±0.050.65 ±0.0352x 0.25 1) ±0.0350.25 1±0.05 Pin 1 marking 0.05 MAX.

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