BFR360

BFR360F INFINEON | Alldatasheet

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/G01 Low voltage/ low current operation /G01 For low noise amplifiers /G01 For Oscillators up to 3.5 GHz and Pout > 10 dBm /G01 Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR360F FBs 1 = B 2 = E 3 = C TSFP-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 V Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 35 mA Base current IB 4 Total power dissipation1) TS /G01 98°C Ptot 210 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS /G01 250 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 6 9 - V Collector-emitter cutoff current VCE = 15 V, VBE = 0 ICES - - 10 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain- IC = 15 mA, VCE = 3 V hFE 60 130 200 -

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 3 V, f = 1 GHz fT 11 14 - GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, emitter grounded Ccb - 0.32 0.5 pF Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Cce - 0.2 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Ceb - 0.4 - Noise figure IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz Fmin - 1 - dB Power gain, maximum available1) IC = 15 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz IC = 15 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 3 GHz Gma 15.5 Transducer gain I C = 15 mA, VCE = 3 V, ZS = ZL = 50/G02 , f = 1.8 GHz IC = 15 mA, VCE = 3 V, ZS = ZL = 50/G02 , f = 3 GHz |S21e|2 dB Third order intercept point at output2) VCE = 3 V, IC = 15 mA, f = 1.8 GHz, ZS = ZL = 50/G02 IP3 - 24 - dBm 1dB Compression point at output IC = 15 mA, VCE = 3 V, ZS = ZL = 50/G02 , f = 1.8 GHz P-1dB - 9 - 1Gma = |S21e / S12e| (k-(k²-1)1/2) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50/G01 from 0.1 MHz to 6 GHz

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: NF = 1- ISE = 150 fA NR = 1- ISC = 20 fA IRB = 75 µA RC = 0.35 /G01 MJE = 0.5 - VTF = 0.198 V CJC = 473 fF XCJC = 0.129 - VJS = 0.75 V EG = 1.11 eV NK = 0.5 K IS = 0.0689 fA VAF = 20 V NE = 2.4 - VAR = 60 V NC = 1.4 - RBM = 7.31 /G02 CJE = 400 fF TF = 9.219 ps ITF = 1.336 mA VJC = 0.864 V TR = 1.92 ns MJS = 0- XTI = 0 - AF = 1 - BF = 147 - IKF = 77.28 mA BR = 6 - IKR = 0.3 A RB = 0.1 /G01 RE = 78.2 m /G01 VJE = 1.3 V XTF = 0.115 - PTF = 0 deg MJC = 0.486 - CJS = 0 fF XTB = 0.5 K FC = 0.954 KF = 1E-14 - All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: L1 = 0.556 nH L2 = 0.657 nH L3 = 0.381 nH C1 = 43 fF C2 = 123 fF C3 = 66 fF C4 = 10 fF C5 = 36 fF C6 = 47 fF EHA07524 Transistor C’ L B’ 3 CChip E L 1 B C2 C3 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes Valid up to 6GHz

Total power dissipation Ptot = /G03 (TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 120 150 180 mW 240 Ptot Permissible Pulse Load RthJS = /G03 (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 Permissible Pulse Load Ptotmax/PtotDC = /G03 (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Collector-base capacitance Ccb= /G03 (VCB) f = 1MHz 0 2 4 6 8 10 12 V 16 VCB 0.1 0.2 0.3 0.4 0.5 0.6 pF 0.8 Ccb

Third order Intercept Point IP3=/G03 (IC) (Output, ZS=ZL=50/G02 ) VCE = parameter, f = 1.8GHz 0 5 10 15 20 25 30 mA 40 IC dBm IP3 Transition frequency fT= /G03 (IC) f = 1GHz VCE = parameter 0 5 10 15 20 25 30 mA 40 IC GHz fT 0.7V Power gain Gma, Gms = /G03 (IC) f = 0.9GHz VCE = parameter 0 5 10 15 20 25 30 mA 40 IC dB G 0.7V Power gain Gma, Gms = /G03 (IC) f = 1.8GHz VCE = parameter 0 5 10 15 20 25 30 mA 40 IC dB G 0.7V

Power Gain Gma, Gms = /G03 (f) VCE = parameter f dB G Ic = 15mA 0.7V Insertion Power Gain |S21|² = /G03 (f) VCE = parameter f dB G Ic = 15mA 0.7V Power Gain Gma, Gms = /G03 (VCE): /G04/G04/G05 f = parameter 0 1 2 3 4 5 V 7 VCE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz Ic = 15mA Power gain Gma, Gms = /G03 (IC) VCE = 3V f = parameter 0 5 10 15 20 25 30 35 mA 45 IC dB G 0.9GHz 1.8GHz 2.4GHz 3GHz 4GHz

Noise figure NF = /G03 (IC) VCE = 3V, f = 1,8 GHz 0 5 10 15 20 25 30 35 mA 45 IC 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 2.4 dB F F50 NFmin Source impedance for min. noise figure vs. frequency VCE = 3 V 100 +j10 -j10 +j25 -j25 +j50 -j50 +j100 -j100 0.9GHz1.8GHz2.4GHz 3GHz 4GHz 3mA 15mA