BFR35A SIEMENS | Alldatasheet

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“asc D MM 235605 OOO4L74 T MESIEG - NPN Silicon Transistor for Low-Noise RF Broadband BFR 35 A Amplifiers and High-Speed Switching Applications BFR 35 or ! ; = 2N661 j SIEMENS AKTIENGESELLSCHAF '4 0 TH-/5 | BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 236 plastic package i (23 A 3 DIN 41869), intended ‘for use in film circuits up to the GHz range, e. g. for ‘ broadband amplifiers and ultrafast, unsaturated logic circuits. The transistor BFR 35 A : is marked with the code letters "GB". The transistor is also available upon request with i changed terminal sequence ("E” and “B” interchanged) under the designation BFR 35 AR : . (mark "GZ"). The BFR 35 A is also available upon request as JEDEC type, designated ‘ 2N6619, : 4200512008 : Type Mark Ordering code ae On soors i BFR 35A GB 062702-F347-S1 EY} Sar : BFR35AR | GZ 062702-F500 a4 : 2N6619 GB 68000-A4667 q s. art Ono | 7 1.0.25 3.4 2-038 : Approx. weight 0.02. Dimensions in mm : BFR 36 A . Maximum ratings 2N 6619 . Collector-emitter voltage Veeo 12 v Collector-emitter voltage (Rae $ 60 Q) Veen 20 v Emitter-base voltage Veo 25 v : Collector current Ic 30 mA Base current Ig 4 mA . Junction temperature Ty 150 °C Storage temperature range Teg -55 to +125 °C . Total power dissipation (Tamp % 50°C) Prot 200 mw Thermal resistance Junction to ambient air Rega | <600 Kw + Junction to substrate back Rinse <400 Kw (ceramic substrate 0.7 mm; 2.5 cm? area) 720 ne a era 2055 6-06 .

we - steer . , 25C D MM 8235605 0004675 1 MBSIEG . | 25¢ 0467S O-T=BI-AS BRB A | BFR 35 AR ! SIEMENS AKTIENGESELLSCHAF 2N6619 i BFR 36 A . Static characteristics (Temp = 25°C) 2N6619 : i Collector-emitter breakdown voltage i (ceo = 600 HA) Varyceo >12 v i Collector-emitter breakdown voltage : Ucen = 10 mA; Ree = 50 Q) Varycer >20 v . Emitter-base breakdown voltage (Tego = 100 uA) Vierieso >2.6 v Collector cutoff current (Veao = 10 V) Tego <60 nA : DC current gain i (Uc = 5 to 20 mA; Vog = 6 V) ee >25 - : Dynamic characteristics (Tsmp = 25°C) i Small-signal current gain j (Ig = 5 MA; Veg = 6 V; f = 1 kHz) Me 70 - Transition frequency i (Ic = 20 mA; Vce = 10 V; f = 200 MHz) fr 6 GHz : Reverse transfer capacitance . Uc = 1 mA; Vee = 6 V; f = 1 MHz) Ci20 04 pF 3 Collector-base capacitance i (Vego = 10 V; f = 1 MHz) Cogo 07 pF Noise figure (Ug = 2 mA; Veg = 6 V; f = 200 MHz; Rg =75Q) = NF 2 dB (Uc = 2 MA; Voe = 6 V; f = 800 MHz; Rg =60Q) NF 2 dB (Ic = 3 mA; Veg = 10 V; f = 2 GHz; Rg = Rg opt) NF 4 dB Power gain . (cg = 15 mA; Vee = 6 V; f = 800 MHz; . Rg = 60.9) pe 140° | GB Output voltage: (three tone modulation f approx. 800 MHz) > (Uc = 15 mA; Veg = 6 V; diy = 60 dB; Ry = Ry = 76 ) Vo 140 mV 2056 6-07 - = 724

_25C D MM 6235605 OOO4L7E 3 MMSIEG °: 25C 04676 ~— 0-T~ ZB) -I5 BFR 35A BFR 35 AR 2 —— SIEMENS AKTIENGESELLSCHAF —~———— 2N 6619 H S parameter 1 Operating point: Vee =6 V, Ic = 5 mA, Z, = 509 f Si 9 Say 9 Siz 9 S22 9 : (GHz) ! 0,1 0,771 - 29 12,75 150 0,025 73 0,971 14 ' 0,2 0,639 - 55 10,70 130 0,041 63 0,807 -21 ! 03 | 0486 |-72 | 834 | 115 | 0052 | 57 | 0697 | -27 : 04 | 0400 | - 87 692 | 104 | 0063 | 67 | 0,660 | -26 i 0s | 0326 | - 97 5,78 | 97 | 0071 | 67 | 0,582 | -29 i 06 | 0,289 | -105 | 498 | 91 | 0079 | 57 | 0,691 | -31 t 0,7 0,232 -112 4,30 85 0,089 56 0,585 -26 5 08 0,206 -123 3,79 80 0,098 56 0,501 -27 { 09 | 0,180 | -129 347 | 76 | 0,109 | 67 | 0,627 | -34 H 1,0 | 0,168 | -142 312 | 73 | 0116 | 57 | 0560 | -31 : 11 [0,151 | -146 | 288 | 68 | 0,125 | 56 | 0,505 | -29 : 1,2 | 0,124 |-163 | 266 | 64 | 0136 | 55 | 0812 | -39 | 1,3 0,131 -174 2,50 60 0,147 64 0,541 -35 1 14 | 0,124 | 173 | 234 | 57 | 0,157 | 54 |o474 | -36 : 15 | 0,128 | 164 | 220 | 53 | 0167 |53- | 0521 | -45 { 16 | 0,132 | 148 208 | 49 | 0,174 | 61 0639 | -38 ! 4.7 | 0160 | 142 1,98 | 47 | 0,188 | 51 0425 | -40 : 18 |,0,158 | 140 183 | 43 | 0,192 | 49 | 0,460 | -6o : 19 0,160 131 1,81 40 0,207 47 0,586 51 ‘ 20 | 0180 | 123 1,73 | 37 | 0,216 | 47 |o4so | -43 i i 22 cect ae 2057 6-08 .

_25C D MM 8235605 OOO4b77 5 MESIEG © \\ 8c 04671 O-T~Ginis, BER BA | ~~ SIEMENS AKTIENGESELLSCHAF 2N 6619 | ‘Toto! perm. powor dissipation i ay oss CTT ‘ . LT : Re COC { i SORE RRRRR | oo EE : POTN NTT | BERLINER i LON ATT : COTTA i yo LLC NTT : LETT TANT TT i LETT TTT ATT { LETT TTT TTT LOTT | LLL TTT i 0 0 100 150°C : —— Tames 55 : bie Vers vite toons nee eg™ OV = 200m Coe . ( LETT LT r LETT TTT

1 CeCe 1 CeCe

WLLL EL LE LErr | | WELT LTT TET TT A ET TET TT oLEET ETT | FETT Ty PETE yy titi ttt LETTE TE 0 5 0 6 20mA 0 5 Ly) e 20mA —ek ele 2058 = G09 ms