BFR35AP SIEMENS | Alldatasheet

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Semiconductor Group 1 Dec-12-1996 BFR 35AP NPN Silicon RF Transistor

  • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 35AP GEs Q62702-F938 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2.5 Collector current IC 30 mA Base current IB 4 Total power dissipation TS ≤ 48 °C Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 365 K/W 1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group 2 Dec-12-1996 BFR 35AP Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 10 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 2.5 V, IC = 0 IEBO - - 100 µA DC current gain IC = 15 mA, VCE = 8 V hFE 40 100 200

Semiconductor Group 3 Dec-12-1996 BFR 35AP Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz fT 3.5 5 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz C cb - 0.38 0.6 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz C ce - 0.2 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C eb - 0.7 - Noise figure IC = 2 mA, VCE = 6 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F 2.9 1.8 dB Power gain 2) IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz G ma 9.5 Transducer gain IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz |S21e|2 12.5