BFR35AP NJSEMI | Alldatasheet
Document overview
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Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN RF Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BFR35AP
DESCRIPTION
- Low Noise Figure NF = 1.8 dB TYP. @VCE = 6 V, lc = 2 mA, f = 900 MHz
- High Gain I S21e I 2= 12.5 dB TYP. @VCE= 8 V,lc = 15 mA,f = 900 MHz
APPLICATIONS
- Designed for low distortion broadband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCES VCEO VEBO lc IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature Range VALUE 2.5 0.28 150 -65-150 UNIT V V V V mA mA W SOT- 2 3 package f?:::-r^ £*Mfrf^ r:;i::i>"- H , h* III t t I Marking 3 c J I L H J; L L |* D-n i G 1 J._L H i i * 1 r J 1_ZJ T D«M A L '•,- D K K L =^J 1 : Base 2 : Emitter 3 : Collector
- It i mm M(N 0. 57 1, 19 2.10 0. 35 i. :s '2. 6c 1.10 0. ;c 0. 076 MAX 0, =1 i, ;0 2. 50 :. 05 2. 05 3. 05 1.30 O.cl 0, 178 M NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going lo press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL V(BR)CEO Ices IOBO IEBO hFE fr COB PG PG
1 S21e I 2
Collector-Emitter Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product Output Capacitance Power Gain Power Gain Insertion Power Gain Insertion Power Gain Noise Figure Noise Figure CONDITIONS lc=1mA; IB=0 VCE= 20V; VBE= 0 VCB=10V; IE=0 V6B= 2.5V; lc= 0 lc=15mA;VCE=8V lc= 15mA ; VCE= 8V; f= 500MHz IE=0 ; Vca= 10V; f= 1MHz lc= 15mA ; VCE= 8V; f= 900MHz lc= 15mA ; VCE= 8V; f= 1 .8GHz lc= 15mA ; VCE= 8V; f= 900MHz lc= 15mA ; VCE= 8V; f= 1 .8GHz lc= 2mA ; VOE= 6V; f= 900MHz lc= 2mA ; VCE= 6V; f= 1 .8GHz MIN 3.5 TYP. 0.38 9.5 12.5 1.8 2.9 MAX 0.1 100 200 0.6 UNIT V uA uA wA GHz PF dB dB dB dB dB dB