BFR35AP INFINEON | Alldatasheet

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Technical content

/G01 For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR35AP GEs 1 = B 2 = E 3 = C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2.5 Collector current IC 30 mA Base current IB 4 Total power dissipation1) TS /G01/G02 48°C Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS /G01/G02 365 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics

Parameter Symbol Values Unit min. typ. max. Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 10 µA Collector -base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 2.5 V, IC = 0 IEBO - - 100 µA DC current gain- IC = 15 mA, VCE = 8 V hFE 40 100 200 -

Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz fT 3.5 5 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 0.38 0.6 pF Collector emitter capacitance VCE = 10 V, f = 1 MHz Cce - 0.2 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 0.7 - Noise figure IC = 2 mA, VCE = 6 V, ZS = ZSopt, f = 900 MHz f = 1.8 GHz F 1.8 2.9 dB Power gain, maximum available1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz f = 1.8 GHz Gma 9.5 Transducer gain I C = 15 mA, VCE = 8 V, ZS = ZL = 50/G03 , f = 900 MHz f = 1.8 GHz |S21e|2 12.5