BFR34R SIEMENS | Alldatasheet
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25C D MM 4235605 0004670 2 MMSIEG }_ NPN Silicon Transistor for Low-Noise BFR 34A RF Broadband Amplifiers .. =§ 2N 6620 : a | D ~ ~, Te i SIEMENS AKTIENGESELLSCHAF © TSS : BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar : to TO 119 (50 B 3 DIN 41867) intended for use in RF amplifiers up to the GHz range, : @. g. for low-noise input stages, broadband antenna amplifiers and oscillators. BFR 34 A . is also available upon request as JEDEC type under the designation 2N6620. i asa i Type Ordering code SB.o2 5 BFR 34A 062702-F346-S1 BAN P 2n66820 | aeso00-a4eea Fal Oem { 5 8 i O9x0,2 2095: ‘ I . Approx. weight 0.25 g Dimensions in mm i i BFR 34A H Maximum ratings 2.N6620 ; Collector-emitter voltage Veo 12 v j Collector-emittar voltage (Rag $ 50 9) Veer 20 v : Emitter-base voltage Veso 25 v Collector current Ic 30 mA Base current Is 4 mA 0 Junction temperature Tj 150 °c : Storage temperature range Teg -55to+125 | °c Total power dissipation (Tam % 50°C) Prot 200 mw Thermal resistance Junction to ambient air Rens | s500 | Kw A {mounted on glass fiber epoxy resin PCB 40 mm x 25 mm x 1.5 mm) ‘ 716 ser eS :
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25C D M™ 8235605 OOO4L7L 4 MMSIEG™ * i -25C 04671 OT F/-75 BFR 34A | 2.N 6620 { H Static characteristics (Tams = 25°C) BFR 34A : 2.N 6620 ! Collector-emitter breakdown voltage $ (ceo = 500 nA) Viaryceo >12 Vv B : Collector-emitter breakdown voltage ; Ucer = 10 mA; Rag = 50 Q) Viarycer >20 v i Emitter-base breakdown voltage . (ego = 100 pA) Vier\\e8o >25 Vv Collector cutoff current 3 (Vogo = 10 V) Tego <50 nA } DC current gain : (Ic = 6 to 26 mA; Vee = 6 V) hee 225 - i Dynamic characteristics (Tamp = 25°C) ‘Small signal current gain . . Uc = 5 MA; Veg = 6 V; f = 1 kHz) Me 70 - . Transition frequency Uc = 200 mA; Veg = 10 V; f = 200 MHz) ty 6 GHz ; Reverse transfer capacitance Uc = 1 mA; Voe = 6 V; f = 1 MHz) C126 04 pF : Collactor-base capacitance * (Veao = 10 V, f = 1 MHz) Ccao 0.75 pF Noise figure (Ug = 2 mA; Veg = 6 V; f = 10 MHz; Ry = 75D NF 1.8 dB. Uc = 2 mA; Veg = 6 V; f = 200 MHz; Rg = 769) NF 2 dB Uc = 2 mA; Veg = 6 V; f = 800 MHz; Rg = 60.2) NF 2 «B Uc = 3 mA; Veg = 10 V; f = 2 GHz; 2g = 2g opt) NF 4 dB - Power gain Uc = 18 mA; Vee = 6 V; f = 800 MHz; . Rg = 60.0) Goo 14 4B : Output voltage . (three tone modulation f approx. 800 MHz) . (Ig = 16 mA, Veg = 6 V; dims = 60 dB; Rg = RL = 76 Q) Vo 140 mv cP oma : sac. 747 2052 6-03 :
_25C D MM 8235605 COO4L72 &b MESIEG -! i 25C 04672 D [-8I~ BFR 34A : T-3l-IS ar oo : SIEMENS AKTIENGESELLSCHAF S parameter Operating point: Voce = 6 V, Ic = 5 MA, Z, = 502 f Si e Sar Q S12 9 S220 Q i (GHz) 01 0,794 - 27 13,08 153 0,021 75 0,930 -13 0,2 0,663 - 52 11,38 136 0,037 62 0,843 -20 0,3 0,535 -71 9,11 121 0,047 58 0,697 -27 04 0,420 - 89 7,70 110 0,054 57 0,691 -27 : 0,5 0,385 -103 6,50 103 0,062 58 0,595 -26 ? 0,6 0,306 -113 5,57 97 0,068 68 0,577 -30 A 0,7 0,287 -131 4,95 91 0,076 58 0,546 -31 7 08 0,272 -138 4,35 86 0,084 58 0,539 -33 ‘ 0,9 0,254 -163 3,96 83 0,089 60 0,543 -34 1,0 0,264 -168 3,51 79 0,095 60 0,520 -33 : 1,1 0,256 -169 3,29 75 0,104 60 0,502 -37 : 1,2 0,268 -175 3,03 72 0,111 61 0,504 -38 : 1,3 0,271 177 2,82 69 0,120 61 0,488 42 t 1,4 0,280 171 2,60 66 0,126 60 0,508 42 i 1,5 0,236 158 2,30 62 0,121 53 0,439 -46 | 1.6 0,314 165 2,36 60 0,139 62 0467 -46 H 1,7 0,328 161 2,21 59 0,148 64 0,469 ~46 i 18 0,345 157 2,07 64 0,154 61 0,439 -50 : 1,9 0,354 166 1,99 52 0,162 62 0,452 -53 ° 2,0 0,374 153 1,90 49 0,169 60 0,435 -65 .
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“asc > mm 8235605 O004L73 & WESIEG : i : 2.N 6620 : ~ SIEMENS AKTIENGESELLSCHAF ~~ i Total perm. power dissipation ‘Transition frequency fr =f (lc) : aw amansemperature gate Outre : TO | aw CECEECCEeee f HAH
8 COCeeceeee ‘eet
{ Coceceeeeereee i 4 i o CATE ERECECE j COCCANCEEE HACE I ~ CCCEec Ne CC IAP! COCCCEEEN, Cece Lf | : HEN EEE COCCCEECEPNT ICCC: COCEeeeCCcNG ' »CLCA ATEN oL TTT TT tt) : o so 00 150 °C 0 5 wv 1S 20mA t —> Ing —l, i Nolse figure NF =f (ic) Noise figure NF =f () Bee" BVit= BOO MEE = 800 F LT ttt [ [ J J - Ye CELLET ee ,
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