BFR340F INFINEON | Alldatasheet

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/G01 Low voltage/ low current operation /G01 Transition frequency of 14 GHz /G01 High insertion gain /G01 Ideal for low current amplifiers and oscillators ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR340F FAs 1 = B 2 = E 3 = C TSFP-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 V Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 10 mA Base current IB 2 Total power dissipation1) TS /G01 118°C Ptot 60 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS /G01 530 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 6 9 - V Collector-emitter cutoff current VCE = 15 V, VBE = 0 ICES - - 10 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain- IC = 5 mA, VCE = 3 V hFE 60 130 200 -

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 6 mA, VCE = 3 V, f = 1 GHz fT 11 14 - GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, emitter grounded Ccb - 0.21 0.4 pF Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Cce - 0.17 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Ceb - 0.11 - Noise figure IC = 1 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz Fmin - 1.15 - dB Power gain, maximum stable1) IC = 5 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt, f = 1.8 GHz Gms - 16 - - Power gain, maximum available1) IC = 5 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 3 GHz Gma - 12 - dB Transducer gain IC = 5 mA, VCE = 3 V, ZS = ZL = 50/G02 , f = 1.8 GHz IC = 5 mA, VCE = 3 V, ZS = ZL = 50/G02 , f = 3 GHz |S21e|2 9.5 dB Third order intercept point at output2) VCE = 3 V, IC = 5 mA, f = 1.8 GHz, ZS = ZL = 50/G02 IP3 - 13 - dBm 1dB Compression point at output IC = 5 mA, VCE = 3 V, ZS = ZL = 50/G02 , f = 1.8 GHz P-1dB - 0 - 1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50/G01 from 0.1 MHz to 6 GHz

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: NF = 0.4213 - ISE = 11.768 nA NR = 0.3253 - ISC = 3.632 nA IRB = 0.01 mA RC = 5.2493 /G01 MJE = 0.4172 - VTF = 0.262 V CJC = 222.63 fF XCJC = 0.3904 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K IS = 6.12 fA VAF = 42.228 V NE = 2.4753 - VAR = 16.777 V NC = 0.8956 - RBM = 0.2403 /G01 CJE = 182 fF TF = 10.3 ps ITF = 0.0017 mA VJC = 0.5487 V TR = 2.71 ns MJS = 0- XTI = 0 - BF = 98.48 - IKF = 103 mA BR = 19.61 - IKR = 0.834 A RB = 59.99 /G01 RE = 3.677 - VJE = 0.626 V XTF = 0 - PTF = 0 deg MJC = 0.319 - CJS = 0 fF NK = 0.5 - FC = 0.735 All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: L1 = 0.556 nH L2 = 0.657 nH L3 = 0.381 nH C1 = 43 fF C2 = 123 fF C3 = 66 fF C4 = 10 fF C5 = 36 fF C6 = 47 fF EHA07524 Transistor C’ L B’ 3 CChip E L 1 B C2 C3 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes Valid up to 6GHz

Total power dissipation Ptot = /G03 (TS) 0 15 30 45 60 75 90 105 120 °C 150 TS mW Ptot Permissible Pulse Load RthJS = /G03 (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 2 10 3 10 K/W RthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 Permissible Pulse Load Ptotmax/PtotDC = /G03 (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 Ptot_max/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Collector-base capacitance Ccb= /G03 (VCB) f = 1MHz 0 2 4 6 8 10 12 V 16 VCB 0.05 0.1 0.15 0.2 0.25 0.3 pF 0.4 Ccb

Third order Intercept Point IP3=/G03 (IC) (Output, ZS=ZL=50/G02 ) VCE = parameter, f = 1.8GHz 0 2 4 6 8 mA 12 IC -12 dBm IP3 Transition frequency fT= /G03 (IC) f = 1GHz VCE = parameter 0 2 4 6 8 mA 12 IC GHz fT 0.75V Power gain Gma, Gms = /G03 (IC) f = 0.9GHz VCE = parameter 0 2 4 6 8 10 mA 14 IC dB G 0.75V Power gain Gma, Gms = /G03 (IC) f = 1.8GHz VCE = parameter 0 2 4 6 8 mA 12 IC mA G 0.75V

Power Gain Gma, Gms = /G03 (f) VCE = parameter 0 0.5 1 1.5 2 2.5 3 GHz 4 f dB G Ic=5mA 0.75V Insertion Power Gain |S21|² = /G03 (f) VCE = parameter 0 0.5 1 1.5 2 2.5 3 GHz 4 f dB G Ic=5mA 0.75V Power Gain Gma, Gms = /G03 (VCE): /G04/G04/G05 f = parameter 0 1 2 3 4 5 6 V 8 VCE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz Ic = 5mA Power gain Gma, Gms = /G03 (IC) VCE = 3V f = parameter 0 2 4 6 8 10 mA 14 IC dB G 0.9GHz 1.8GHz 2.4GHz 3GHz 4GHz

Noise figure NF = /G03 (IC) VCE = 3V, f = 1,8 GHz 0 2 4 6 8 mA 12 IC 0.5 1.5 2.5 3.5 4.5 GHz F F50 NFmin Source impedance for min. noise figure vs. frequency VCE = 3 V 100 +j100 -j100 +j50 -j50 +j25 -j25 +j10 -j10 0.9GHz 1.8GHz 2.4GHz3GHz 4GHz 5mA 1mA