BFR280W

BFR280W SIEMENS | Alldatasheet

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Semiconductor Group 1 Dec-11-1996 BFR 280W NPN Silicon RF Transistor

• For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA fT = 7.5GHz F = 1.5dB at 900MHz ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 280W REs Q62702-F1494 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 8 V Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 10 mA Base current IB 1.2 Total power dissipation TS ≤ 115 °C Ptot mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 435 K/W 1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group 2 Dec-11-1996 BFR 280W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 8 - - V Collector-emitter cutoff current VCE = 10 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 8 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 3 mA, VCE = 5 V hFE 30 100 200

Semiconductor Group 3 Dec-11-1996 BFR 280W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 6 mA, VCE = 5 V, f = 500 MHz fT 5 7.5 - GHz Collector-base capacitance VCB = 5 V, f = 1 MHz C cb - 0.32 0.5 pF Collector-emitter capacitance VCE = 5 V, f = 1 MHz C ce - 0.22 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C eb - 0.22 - Noise figure IC = 1.5 mA, VCE = 5 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F 1.5 dB Power gain 1) IC = 3 mA, VCE = 5 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz G ms Transducer gain IC = 3 mA, VCE = 5 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz |S21e|2 8.5 1) G ms = |S21/S12|

Semiconductor Group 4 Dec-11-1996 BFR 280W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 6.472 fA VAF = 25.609 V NE = 1.6163 - VAR = 5.6909 V NC = 1.0651 - RBM = 14.999 Ω CJE = 36.218 fF TF = 11.744 ps ITF = 6.2179 mA VJC = 1.1943 V TR = 2.3693 ns MJS = 0- XTI = 3- BF = 89.888 - IKF = 0.073457 A BR = 20.238 - IKR = 0.012696 A RB = 15 Ω RE = 2.4518 Ω VJE = 0.70035 V XTF = 0.21585 - PTF = 0 deg MJC = 0.30017 - CJS = 0 fF XTB = 0 - FC = 0.96275 - NF = 1.0801 - ISE = 15.596 fA NR = 0.83403 - ISC = 1.409 fA IRB = 0.031958 mA RC = 6.989 Ω MJE = 0.69773 - VTF = 0.2035 V CJC = 252.99 fF XCJC = 0.19188 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: LBI = 0.57 nH LBO = 0.4 nH LEI = 0.43 nH LEO = 0.5 nH LCI = 0n H LCO = 0.41 nH CBE = 61 fF CCB = 101 fF CCE = 175 fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm

Semiconductor Group 5 Dec-11-1996 BFR 280W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS mW 100 Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp 1 10 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 6 Dec-11-1996 BFR 280W Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz 0 2 4 6 8 V 11 V R 0.0 0.1 0.2 0.3 pF 0.5 C cb Transition frequency fT = f (IC ) VCE = Parameter 0 2 4 6 8 mA 11 IC GHz fT 10V 8V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 2 4 6 8 mA 11 IC dB G 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 1.8GHz VCE = Parameter 0 2 4 6 8 mA 11 IC dB G 10V 0.7V

Semiconductor Group 7 Dec-11-1996 BFR 280W Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 V CE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC=3mA Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50Ω ) VCE = Parameter, f = 900MHz 0 2 4 6 8 mA 11 IC -12 dBm IP3 Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7V IC=3mA Power Gain |S21|2= f(f) VCE = Parameter f dB S21 10V 0.7V IC=3mA