BFR280W INFINEON | Alldatasheet

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/G01 For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m /G01 fT = 7.5 GHz F = 1.5 dB at 900 MHz VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR280W REs 1 = B 2 = E 3 = C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 8 V Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 10 mA Base current IB 1.2 Total power dissipation TS = 115 °C 1) Ptot 80 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point2) RthJS /G01 435 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 8 - - V Collector-emitter cutoff current VCE = 10 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 8 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 3 mA, VCE = 5 V hFE 30 100 200 -

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics (verified by random sampling) Transition frequency IC = 6 mA, VCE = 5 V, f = 500 MHz fT 5 7.5 - GHz Collector-base capacitance VCB = 5 V, f = 1 MHz Ccb - 0.27 0.45 pF Collector-emitter capacitance VCE = 5 V, f = 1 MHz Cce - 0.18 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 0.22 - Noise figure IC = 1.5 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz F 1.5 dB Power gain, maximum stable 1) IC = 3 mA, VCE = 5 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Gms 17.5 13.5 Transducer gain IC = 3 mA, VCE = 5 V, ZS = ZL = 50/G02 , f = 900 MHz IC = 3 mA, VCE = 5 V |S21e|2 1Gms = |S21 / S12|

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 6.472 fA VAF = 25.609 V NE = 1.6163 - VAR = 5.6909 V NC = 1.0651 - RBM = 14.999 /G01 CJE = 36.218 fF TF = 11.744 ps ITF = 6.2179 mA VJC = 1.1943 V TR = 2.3693 ns MJS = 0- XTI = 3 - BF = 89.888 - IKF = 0.073457 A BR = 20.238 - IKR = 0.012696 A RB = 15 /G01 RE = 2.4518 /G01 VJE = 0.70035 V XTF = 0.21585 - PTF = 0 deg MJC = 0.30017 - CJS = 0f F XTB = 0- FC = 0.96275 - NF = 1.0801 - ISE = 15.596 fA NR = 0.83403 - ISC = 1.409 fA IRB = 0.031958 mA RC = 6.989 /G01 MJE = 0.69773 - VTF = 0.2035 V CJC = 252.99 fF XCJC = 0.19188 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: LBI = 0.57 nH LBO = 0.4 nH LEI = 0.43 nH LEO = 0.5 nH LCI = 0n H LCO = 0.41 nH C BE = 61 fF C CB = 101 fF C CE = 175 fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm

Total power dissipation Ptot = f (TS ) 0 20 40 60 80 100 120 °C 150 TS mW 100 P tot Permissible Pulse Load R thJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Collector-base capacitance Ccb = f (VCB ) f = 1MHz 0 2 4 6 8 V 11 VCB 0.0 0.1 0.2 0.3 pF 0.5 C cb Transition frequency fT = f (IC) V CE = Parameter 0 2 4 6 8 mA 11 IC GHz fT 10V 8V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 2 4 6 8 mA 11 IC dB G 10V 0.7V Power Gain G ma , Gms = f(IC) f = 1.8GHz VCE = Parameter 0 2 4 6 8 mA 11 IC dB G 10V 0.7V

Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50/G01 ) VCE = Parameter, f = 900MHz 0 2 4 6 8 mA 11 IC -12 dBm IP3 Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 VCE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC =3mA Power Gain |S21|2= f(f) V CE = Parameter f dB S21 0.7V 10V IC =3mA Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7V IC =3mA