BFR194

BFR194 SIEMENS | Alldatasheet

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Semiconductor Group 1 Dec-13-1996 BFR 194 PNP Silicon RF Transistor

• For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA
• Complementary type: BFR 106 (NPN) ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 194 RKs Q62702-F1346 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 100 mA Base current IB 10 Total power dissipation TS ≤ 73 °C Ptot 700 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 110 K/W 1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group 2 Dec-13-1996 BFR 194 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 - - V Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 2 V, IC = 0 IEBO - - 1 µA DC current gain IC = 70 mA, VCE = 8 V hFE 15 50 -

Semiconductor Group 3 Dec-13-1996 BFR 194 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 70 mA, VCE = 8 V, f = 500 MHz fT 3.5 5 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz C cb - 1.47 2 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz C ce - 0.28 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C eb - 4.4 - Noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F 4.7 2.8 dB Power gain 2) IC = 70 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz G ma 5.5 Transducer gain IC = 70 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 MHz |S21e|2

Semiconductor Group 4 Dec-13-1996 BFR 194 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.574 fA VAF = 9.1007 V NE = 0.841 - VAR = 1.7871 V NC = 1.6 - RBM = 4.1356 Ω CJE = 17.699 fF TF = 53.11 ps ITF = 0.010453 mA VJC = 0.71631 V TR = 0.97481 ns MJS = 0- XTI = 3- BF = 111.78 - IKF = 0.84785 A BR = 92.296 - IKR = 0.012843 A RB = 0.75304 Ω RE = 0.15908 Ω VJE = 0.84843 V XTF = 0.65766 - PTF = 0 deg MJC = 0.40003 - CJS = 0 fF XTB = 0 - FC = 0.90755 - NF = 0.66503 - ISE = 21.629 fA NR = 0.43618 - ISC = 0.0078447 fA IRB = 0.061674 mA RC = 0.10833 Ω MJE = 0.48212 - VTF = 0.10323 V CJC = 3585.6 fF XCJC = 0.063742 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: LBI = 0.85 nH LBO = 0.51 nH LEI = 0.69 nH LEO = 0.61 nH LCI = 0n H LCO = 0.49 nH CBE = 73 fF CCB = 84 fF CCE = 165 fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm

Semiconductor Group 5 Dec-13-1996 BFR 194 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 100 200 300 400 500 600 mW 800 Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp 0 10 1 10 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.002 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 2 10 Ptotmax/P totDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 6 Dec-13-1996 BFR 194 Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz 0 4 8 12 16 V 22 V R 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 pF 4.5 C cb Transition frequency fT = f (IC ) VCE = Parameter 0 20 40 60 80 mA 120 IC 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 GHz 5.5 fT 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 20 40 60 80 mA 120 IC dB G 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 1.8GHz VCE = Parameter 0 20 40 60 80 mA 120 IC 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 dB 7.0 G 10V 0.7V

Semiconductor Group 7 Dec-13-1996 BFR 194 Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 V CE dB G 0.9GHz 1.8GHz 0.9GHz IC =70mA Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50Ω ) VCE = Parameter, f = 900MHz 0 10 20 30 40 50 60 70 80 mA 100 IC dBm IP3 Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7V IC =70mA Power Gain |S21|2= f(f) VCE = Parameter f dB S21 10V 0.7V IC =70mA