BFR193

BFR193 SIEMENS | Alldatasheet

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Semiconductor Group 1 Dec-11-1996 BFR 193 NPN Silicon RF Transistor

• For low noise, high-gain amplifiers up to 2GHz
• For linear broadband amplifiers
• fT = 8GHz F = 1.3dB at 900MHz ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 193 RCs Q62702-F1218 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 80 mA Base current IB 10 Total power dissipation TS ≤ 69 °C Ptot 580 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 140 K/W 1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group 2 Dec-11-1996 BFR 193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200

Semiconductor Group 3 Dec-11-1996 BFR 193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 50 mA, VCE = 8 V, f = 500 MHz fT 6 8 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz C cb - 0.68 1 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz C ce - 0.24 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C eb - 1.8 - Noise figure IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F 2.1 1.3 dB Power gain 2) IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz G ma 14.5 Transducer gain IC = 30 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz |S21e|2 12.5

Semiconductor Group 4 Dec-11-1996 BFR 193 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.2738 fA VAF = 24 V NE = 1.935 - VAR = 3.8742 V NC = 0.94371 - RBM = 1.8368 Ω CJE = 1.1824 fF TF = 18.828 ps ITF = 0.96893 mA VJC = 1.1828 V TR = 1.0037 ns MJS = 0- XTI = 3- BF = 125 - IKF = 0.26949 A BR = 14.267 - IKR = 0.037925 A RB = 1 Ω RE = 0.76534 Ω VJE = 0.70276 V XTF = 0.69477 - PTF = 0 deg MJC = 0.30002 - CJS = 0 fF XTB = 0 - FC = 0.72063 - NF = 0.95341 - ISE = 10.627 fA NR = 1.4289 - ISC = 0.037409 fA IRB = 0.91763 mA RC = 0.11938 Ω MJE = 0.48654 - VTF = 0.8 V CJC = 935.03 fF XCJC = 0.053563 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: LBI = 0.85 nH LBO = 0.51 nH LEI = 0.69 nH LEO = 0.61 nH LCI = 0n H LCO = 0.43 nH CBE = 73 fF CCB = 84 fF CCE = 165 fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm

Semiconductor Group 5 Dec-11-1996 BFR 193 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 100 150 200 250 300 350 400 450 500 mW 600 Ptot} TS TA Permissible Pulse Load R thJS = f (tp) s tp 0 10 1 10 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 2 10 3 10 P totmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 6 Dec-11-1996 BFR 193 Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz 0 4 8 12 16 V 22 V R 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 pF 1.3 C cb Transition frequency fT = f (IC ) VCE = Parameter 0 10 20 30 40 50 60 70 mA 85 IC GHz fT 8V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 10 20 30 40 50 60 70 mA 85 IC dB G 8V 0.7V Power Gain G ma , Gms = f(IC ) f = 1.8GHz VCE = Parameter 0 10 20 30 40 50 60 70 mA 85 IC dB G 0.7V

Semiconductor Group 7 Dec-11-1996 BFR 193 Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 1 2 3 4 5 6 7 8 V 10 V CE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC=30mA Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50Ω ) VCE = Parameter, f = 900MHz 0 10 20 30 40 50 60 70 80 mA 100 IC dBm IP3 Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 1V 0.7V IC =30mA Power Gain |S21|2= f(f) VCE = Parameter f dB S21 10V 0.7V IC =30mA