BFR183T

BFR183T INFINEON | Alldatasheet

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/G01 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA /G01 fT = 8 GHz F = 1.2 dB at 900 MHz VPS059961 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR183T RHs 1 = B 2 = E 3 = C SC75 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 mA Base current IB 5 Total power dissipation TS /G01 83°C 1) Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point2) RthJS /G01 270 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 15 mA, VCE = 8 V hFE 50 100 200 -

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics (verified by random sampling) Transition frequency IC = 25 mA, VCE = 8 V, f = 500 MHz fT 6 8 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 0.4 0.6 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce - 0.18 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 1 - Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz F 1.2 dB Power gain, maximum stable 1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Gms - 19.5 - Power gain, maximum available 2) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gma - 12.5 - Transducer gain IC = 15 mA, VCE = 8 V, ZS = ZL = 50/G01 , f = 900 MHz f = 1.8 GHz |S21e|2 15.5 1Gms = |S21 / S12|

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.0345 fA VAF = 14.772 V NE = 1.2149 - VAR = 3.4276 V NC = 0.85331 - RBM = 1.0112 /G01 CJE = 23.077 fF TF = 22.746 ps ITF = 1.8773 mA VJC = 1.1967 V TR = 1.0553 ns MJS = 0- XTI = 3 - BF = 115.98 - IKF = 0.14562 A BR = 10.016 - IKR = 0.013483 A RB = 2.5426 /G01 RE = 1.3435 VJE = 1.0792 V XTF = 0.36823 - PTF = 0 deg MJC = 0.3 - CJS = 0f F XTB = 0- FC = 0.54852 - NF = 0.80799 - ISE = 16.818 fA NR = 0.99543 - ISC = 1.3559 fA IRB = 0.43801 mA RC = 0.20486 /G01 MJE = 0.45354 - VTF = 0.50905 V CJC = 460.11 fF XCJC = 0.053823 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L1 = 0.762 nH L2 = 0.706 nH L3 = 0.382 nH C 1 = 62 fF C 2 = 84 fF C 3 = 180 fF C 4 = 7 C 5 = 40 fF C 6 = 48 fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes

Total power dissipation Ptot = f (TS ) 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 P tot Permissible Pulse Load R thJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 R thJS D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 Ptotmax / PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Collector-base capacitance Ccb = f (VCB ) f = 1MHz 0 5 10 15 V 25 VCB 0.2 0.4 0.6 pF C cb Transition frequency fT = f (IC) V CE = Parameter 0 5 10 15 20 25 30 35 40 mA 50 IC GHz fT 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 5 10 15 20 25 30 35 40 mA 50 IC dB G 10V Power Gain G ma , Gms = f(IC) f = 1.8GHz VCE = Parameter 0 5 10 15 20 25 30 35 40 mA 50 IC dB G ma 10V

Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50/G01 ) VCE = Parameter, f = 900MHz 0 5 10 15 20 25 30 mA 40 IC dBm IP3 Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 3 6 V 12 VCE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC =15mA Power Gain |S21|2= f(f) V CE = Parameter 0 1 2 3 4 5 GHz 7 f dBm S21 10V IC =15mA Power Gain G ma , G ms = f(f) VCE = Parameter 0 1 2 3 4 5 GHz 7 f dB G IC=15mA 10V