BFR183F

BFR183F INFINEON | Alldatasheet

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Technical content

NPN Silicon RF Transistor*

• For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
• fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR183F RHs 1=B 2=E 3=C TSFP-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 mA Base current IB 5 Total power dissipation1) TS ≤ 62 °C Ptot 450 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 195 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain- IC = 15 mA, VCE = 8 V, pulse measured hFE 70 100 140 -

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 25 mA, VCE = 8 V, f = 500 MHz fT 6 8 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.34 0.54 pF Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0, base grounded Cce - 0.2 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 1.1 - Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz f = 1.8 GHz F 0.9 1.4 dB Power gain, maximum stableIC = 15 mA IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Gms - 21 - dB Power gain, maximum available1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gma - 14.5 - dB Transducer gain IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz f = 1.8 MHz |S21e|2 dB Third order intercept point at output2) VCE = 8 V, IC = 15 mA, f = 900MHz, ZS=ZL=50 Ω IP3 - 26 - dBm 1dB Compression point3) IC = 15 mA, VCE = 8 V, f = 900MHz, ZS=ZL=50 Ω P-1dB - 10.5 - 1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21 / S12| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 3DC current at no input power

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: NF = 0.80799 - ISE = 16.818 fA NR = 0.99543 - ISC = 1.3559 fA IRB = 0.43801 mA RC = 0.20486 Ω MJE = 0.45354 - VTF = 0.50905 V CJC = 460.11 fF XCJC = 0.053823 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K IS = 1.0345 fA VAF = 14.772 V NE = 1.2149 - VAR = 3.4276 V NC = 0.85331 - RBM = 1.0112 Ω CJE = 23.077 fF TF = 22.746 ps ITF = 1.8773 mA VJC = 1.1967 V TR = 1.0553 ns MJS = 0- XTI = 3- BF = 115.98 - IKF = 0.14562 A BR = 10.016 - IKR = 0.013483 A RB = 2.5426 Ω RE = 1.3435 - VJE = 1.0792 V XTF = 0.36823 - PTF = 0 deg MJC = 0.3 - CJS = 0 fF XTB = 0 - FC = 0.54852 All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: L1 = 0.556 nH L2 = 0.675 nH L3 = 0.381 nH C1 = 43 fF C2 = 123 fF C3 = 66 fF C4 = 10 fF C5 = 36 fF C6 = 47 fF EHA07524 Transistor C' L B' 3 CChip E L 1 B C2 C3 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes Valid up to 6GHz

Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel ±0.050.2 ±0.051.2 10˚ MAX. ±0.050.8 1.2±0.05 ±0.040.55 ±0.050.2 ±0.050.15±0.050.2 0.4±0.05 0.4±0.05 0.4 0.45 1.05 0.4 0.4 Manufacturer Type code BCR847BF Example Pin 1 0.2 1.35 0.3 0.7 1.2 1.5 Pin 1

Published by Infineon Technologies AG, St.-Martin-Strasse 53,

81669 München

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