BFR183

BFR183 SIEMENS | Alldatasheet

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Semiconductor Group 1 Dec-11-1996 BFR 183 NPN Silicon RF Transistor

• For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA
• fT = 8 GHz F = 1.2 dB at 900 MHz ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 183 RHs Q62702-F1316 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 mA Base current IB 5 Total power dissipation TS ≤ 60 °C Ptot 450 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 200 K/W 1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group 2 Dec-11-1996 BFR 183 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 15 mA, VCE = 8 V hFE 50 100 200

Semiconductor Group 3 Dec-11-1996 BFR 183 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 25 mA, VCE = 8 V, f = 500 MHz fT 6 8 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz C cb - 0.4 0.6 pF Collector-emitter capacitance VCE = vbe = 10 V, f = 1 MHz C ce - 0.2 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C eb - 1 - Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F 1.2 dB Power gain 2) IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz G ma 16.5 Transducer gain IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz |S21e|2 8.5

Semiconductor Group 4 Dec-11-1996 BFR 183 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.0345 fA VAF = 14.772 V NE = 1.2149 - VAR = 3.4276 V NC = 0.85331 - RBM = 2.5426 Ω CJE = 23.077 fF TF = 22.746 ps ITF = 1.8773 mA VJC = 1.1967 V TR = 1.0553 ns MJS = 0- XTI = 3- BF = 115.98 - IKF = 0.14562 A BR = 10.016 - IKR = 0.013483 A RB = 1.0112 Ω RE = 1.3435 Ω VJE = 1.0792 V XTF = 0.36823 - PTF = 0 deg MJC = 0.3 - CJS = 0 fF XTB = 0 - FC = 0.54852 - NF = 0.80799 - ISE = 16.818 fA NR = 0.99543 - ISC = 1.3559 fA IRB = 0.43801 mA RC = 0.20486 Ω MJE = 0.45354 - VTF = 0.50905 V CJC = 460.11 fF XCJC = 0.053823 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: LBI = 0.85 nH LBO = 0.51 nH LEI = 0.69 nH LEO = 0.61 nH LCI = 0n H LCO = 0.49 nH CBE = 73 fF CCB = 84 fF CCE = 165 fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm

Semiconductor Group 5 Dec-11-1996 BFR 183 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 100 150 200 250 300 350 400 mW 500 Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp 1 10 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 2 10 P totmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 6 Dec-11-1996 BFR 183 Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz 0 4 8 12 16 V 22 V R 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 pF 1.1 C cb Transition frequency fT = f (IC ) VCE = Parameter 0 5 10 15 20 25 30 35 mA 45 IC GHz fT 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 5 10 15 20 25 30 35 mA 45 IC dB G 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 1.8GHz VCE = Parameter 0 5 10 15 20 25 30 35 mA 45 IC dB G 10V 0.7V

Semiconductor Group 7 Dec-11-1996 BFR 183 Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 V CE dB G 0.9GHz 1.8GHz 0.9GHZ 1.8GHz IC =15mA Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50Ω ) VCE = Parameter, f = 900MHz 0 5 10 15 20 25 30 mA 40 IC dBm IP3 Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7V IC =15mA Power Gain |S21|2= f(f) VCE = Parameter f dB S21 10V 0.7V IC =15mA