BFR182W_10 INFINEON | Alldatasheet

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Technical content

  • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
  • fT = 8 GHz, F = 0.9 dB at 900 MHz
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 mA Base current IB 4 Total power dissipation1) TS ≤ 90 °C Ptot 250 mW Junction temperature TJ 150 °C Ambient temperature TA -55 ... 150 Storage temperature TStg -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 240 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 4 V, VBE = 0 VCE = 15 V, VBE = 0 V, TA = 85 °C (verified by random sampling) ICES nA Collector-base cutoff current VCB = 4 V, IE = 0 ICBO - 1 30 Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 50 DC current gain IC = 10 mA, VCE = 8 V, pulse measured hFE 70 100 140 -

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz fT 6 8 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.34 0.5 pF Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.26 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 0.8 - Noise figure IC = 3 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz IC = 3 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz F 0.9 1.3 dB Power gain, maximum stable1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Gms - 19 - dB Power gain, maximum available2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gma - 12.5 - dB Transducer gain IC = 10 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz IC = 10 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 1.8 GHz |S21e|2 15.5 dB 1Gms = |S21 / S12| 2Gma = |S21e / S12e| (k-(k²-1)1/2)

Total power dissipation Ptot = ƒ(TS) 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 Ptot Permissible Pulse Load RthJS = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

For the SPICE model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models.

Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 1.25 ±0.1 0.1 MAX. 2.1±0.1 0.15 +0.1 -0.05 0.3+0.1 ±0.10.9 A ±0.22 -0.05 0.650.65 M 0.1 0.1 MIN. 0.1 M0.2 A 0.24 2.15 1.1 2.3 Pin 1 Pin 1 2005, June Date code (YM) BCR108W Type code 0.6 0.8 1.6 0.65 0.65 Manufacturer

81726 Munich, Germany

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