BFR182

BFR182 SIEMENS | Alldatasheet

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Semiconductor Group 1 Sep-04-1996 BFR 182 NPN Silicon RF Transistor

• For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA
• fT = 8GHz F = 1.2dB at 900MHz ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 182 RGs Q62702-F1315 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 mA Base current IB 4 Total power dissipation TS ≤ 93 °C Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 230 K/W 1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group 2 Sep-04-1996 BFR 182 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 10 mA, VCE = 8 V hFE 50 100 200

Semiconductor Group 3 Sep-04-1996 BFR 182 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz fT 6 8 - GHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0 , f = 1 MHz C cb - 0.33 0.5 pF Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0 , f = 1 MHz C ce - 0.2 - Emitter-base capacitance VEB = 0.5 V, VCB = vcb = 0 , f = 1 MHz C eb - 0.6 - Noise figure IC = 3 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F 1.9 1.2 dB Power gain 2) IC = 10 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz G ma 11.5 17.5 Transducer gain IC = 10 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz |S21e|2 14.5

Semiconductor Group 4 Sep-04-1996 BFR 182 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.8499 fA VAF = 21.742 V NE = 0.91624 - VAR = 2.2595 V NC = 0.5641 - RBM = 3.4217 Ω CJE = 8.8619 fF TF = 22.72 ps ITF = 6.5523 mA VJC = 1.0132 V TR = 1.7541 ns MJS = 0- XTI = 3- BF = 84.113 - IKF = 0.14414 A BR = 10.004 - IKR = 0.03978 A RB = 2.8263 Ω RE = 2.1858 Ω VJE = 1.0378 V XTF = 0.43147 - PTF = 0 deg MJC = 0.31068 - CJS = 0 fF XTB = 0 - FC = 0.64175 - NF = 0.56639 - ISE = 8.4254 fA NR = 0.54818 - ISC = 5.9438 fA IRB = 0.071955 mA RC = 1.8159 Ω MJE = 0.40796 - VTF = 0.34608 V CJC = 490.25 fF XCJC = 0.19281 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: LBI = 0.85 nH LBO = 0.51 nH LEI = 0.69 nH LEO = 0.61 nH LCI = 0n H LCO = 0.49 nH CBE = 73 fF CCB = 84 fF CCE = 165 fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/357.htm

Semiconductor Group 5 Sep-04-1996 BFR 182 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 100 150 200 mW 300 Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp 1 10 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 2 10 - Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 6 Sep-04-1996 BFR 182 Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz 0 4 8 12 16 V 22 V R 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 pF 1.1 C cb Transition frequency fT = f (IC ) VCE = Parameter 0 5 10 15 mA 25 IC GHz fT 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 5 10 15 mA 25 IC dB G 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 1.8GHz VCE = Parameter 0 4 8 12 16 20 mA 26 IC dB G 10V 0.7V

Semiconductor Group 7 Sep-04-1996 BFR 182 Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 V CE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC =10mA Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50Ω ) VCE = Parameter, f = 900MHz 0 5 10 15 V 25 V CE dBm IP3 Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7V IC =10mA Power Gain |S21|2= f(f) VCE = Parameter f dB S21 10V 0.7V IC =10mA

Semiconductor Group 8 Sep-04-1996 BFR 182 Package