BFR14C SIEMENS | Alldatasheet
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25C D MM 4235605 O004bb2 3 MESIEG THB 23 NPN Silicon Microwave Transistor up to 2 GHz BFR 14C SIEMENS AKTIENGESELLSCHAF 2 D BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 200 mil package similar to TO 120. It is outstanding for a low noise figure, high power gain and low distortion factor. It is intended for use in low-noise RF input stages, broadband IF, and radar amplifiers up to 4 GHz, as well as for smaller : oscillator circuits up to 6 GHz. The 200 mil ceramic package is particularly suitable for use in thin and thick film circuits for aircraft and Space applications. The emitter is electrically connected to the package. . _ The transistor is marked on its package with the short designation "14 C", Osis tee Type Mark Ordering code BFR 14 14 062702-F543 iter , By R: oe iat . miter 0,0635 ta, 15: i Es Maximum ratings (Tamp = 25°C) Collector-emitter voltage Veeo 20 v Collector-base voltage Veso 27 v Collector-emitter voltage (Rge 5 0 0) Veen 27 v Emitter-base voltage Veao 1.5 v . Collector current Ic 35 mA Base current Ip 4 mA Junction temperature Tj 200 °c Storage temperature range Tg ~65to+175 | °C Total powar dissipation (Tamp S 150°C) Prot 700 mw Thermal resistance Junction to case Ric ‘| $70 | Kw 708 2043 F-08
4 25C D MM@ 6235605 OOO4LL3 5 MESIEG! \\ 25C 04663 0 7*3)-23 BFR 14C : z — SIEMENS AKTIENGESELLSCHAF i Static characteristics (Tamp = 25°C) i Collector-emitter breakdown voltage ° (ceo = 1 mA) Viericeo 220 Vv ; Collector-emitter breakdown voltage 2 (Icen = 10 mA; Rag = 50 Q) Vierycer 227 v : Emitter-base breakdown voltage i (Tego = 100 HA) Viar)e80 21.5 v ; Collector cutoff current ; (Veao = 10 V) Ieao <50 nA : Collector cutoff current i (Veao = 10 V; Tamb = 150°C) Teao <50 HA i Collector cutoff current : (Vego = 25 V) Tees <100 HA 5 DC current gain Ug = 15 mA; Voe = 10 V) hee >30 - ! Dynamic characteristics (Tam = 25°C) i ‘Small-signal current gain Uc = 18 mA; Veg = 10 V; f = 1 kHz) hte 75 - i Transition frequency t Uc = 18 mA; Veg = 10 V; f = 200 MHz) fr 43 GHz : Reverse transfer capacitance Uc = 1 mA; Veg = 10 V; f= 1 MHz) C120 0.48 (50.65)) pF Noise figure : Uc = 2 mA; Veg = 10 V; f = 10 MHz; Rg = 75.9) NF 1.6 (52) dB Uc = 6 MA; Voe = 10 V; f = 2 GHz; Zy = Zy opt) NF. 3.6 ($4.5) | dB Power gain . (Ig = 18 mA; Voe = 10 V; f = 2 GHz) Gre opt. 1 dB
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al . . 1 25C D MM@ 8235605 OOO4LLY 7 MMSIEG : - * "25C 04664 0 T-3/-33 BFR 14C S parameter ‘ Operating point: Vce = 10 V, Ic = 3 mA, Zp = 502 : t Sit e {Sa e [Se |? S22 % | Gmax i (GHz) (dB) : 0,2 0,872 |- 34 |6,78 151 0,030 | 66 0,943 |-13 | 324 i 0,3 0,806 |- 48 | 6,36 140 0,042 | 57 0,865 |-19 | 26,6 + 04 0,767 |- 63 | 5,97 130 0,050 | 52 0,805 |-27 | 23,9 t 06 0,718 |- 75 | 543 123 0,056 | 46 0,823 |-27 | 22,8 t 06 0,685 |- 88 | 5,09 115 0,061 | 42 0,732 |-28 | 20,2 3 0,7 0,624 |- 99 |4,71 107 0,066 | 38 0,740 |-33 | 19,0 ‘ 08 0,611 |}-109 | 4,38 100 0,069 | 36 0,711 | -31 17,9 0,9 0,562 | -121 413 94 0,072 | 33 0,634 |-36 | 16,2 1,0 0,567 |-127 | 3,82 89 0,074 | 32 0,702 |-39 | 16,3 11 0,508 |-138 | 3,60 84, 0,076 | 31 0,647 |-35 | 14,8 i 1,2 0,569 |-144 | 3,33 79 0,077 | 30 0,617 |-44 | 14,2 1,3 0,491 |-148 | 3,11 76 0,078 | 28 0,631 |-43 | 13,3 14 0,633 |-157 | 2,91 72 0,080 | 27 0,627 |-46 | 12,9 . 16 0481 |-158 | 2,71 67 0,079 | 27 0,618 |-44 |11,9 f 1,6 0494 |-166 | 2,61 64 0,081 | 27 0,608 |-50 | 11,5 1,7 0,464 |-168 | 2,44 61 0,082 |27 0,621 |-48 | 10,9 18 0475 |-176 | 2,33 67 0,084 | 28 0,616 |-52 |10,5 : 2,0 0,467 176 |2,16 51 0,089 | 28 0,599 |-56 9,7 Operating point: Veg = 10 V; Ig = 10 mA, Zo = 50.2 0,2 0,631 |- 73 |16,57 | 132 0,022 |53 0,787 |-21 30,8 04 0,620 |-118 11,28 | 107 0,030 |48 0,610 |-31 | 24,4 . 06 0,490 |-133 9,42 |100 0,032 |46 0,628 |-28 | 22,9 06 0,484 |-143 8,01 94 0,035 |47 0,561 |-26 | 20,9 . 0,7 0,458 |-153 7,00 88 0,039 | 48 0,679 |-31 19,7 08 0,459 | -160 6,27 83 0,042 |48 0,574 |-26 | 18,7 3 0,9 0,453 | -169 5,60 79 0,044 |48 0,502 |-31 17,2 i 1,0 0,464 |-170 5,10 75 0,048 | 48 0,580 |-35 | 17,0 : 1,1 0,441 179 4,68 71 0,051 |49 0,537 |-29 | 15,8 : 1,2 0,481 179 4,29 68 0,054 | 49 0,510 |-39 | 15,1 “ 1,3 0,430 172 3,94 65 0,057 |49 0,531 |-38 | 14,2 : 14 0,489 171 3,64 62 0,059 |49 0,532 |-42 | 13,9 : 1,5 0,434 167 3,39 59 0,062 |48 0,533 |-39 | 13,0 i 1,6 0,457 164 3,22 56 0,066 | 49 0,528 |-45 | 12,6 : 1,7 0,425 161 3,02 53 0,069 | 50 0,547 |-43 | 12,0 £ 18 0,454 156 2,87 50 0,073 |49 0,540 |-48 |11,6 1,9 0,450 184 2,74 47 0,076 |49 0548 |-45 [11,3 . 2,0 0,444 151 2,64 45 0,080 |49 0,529 |-51 10,8 M0 2045 F-10
25C D MM 8235605 COONLLS 9 MMSIEG 4 * "25C 04665. D-T=3I-23 ss BFR14C | SIEMENS AKTIENGESELLSCHAF — SOS” i S parameter i Operating point: Vg = 10 V; Ic = 20 mA, Z) = 50.0 : (GHz) (a) F 0,1 0,636 |- 69 | 26,19 | 141 0,010 | 61 0,879 |-15 | 36,3 $ 0,2 0,517 | -155 19,25 | 117 0,016 | 49 0,709 |-19 | 30,1 ‘ 03 0,496 | -137 14,19 | 105 0,019 | 52 0,624 |-20 | 26,4 : 0,4 0,494 |-151 11,05 97 0,021 | 52 0,584 |-24 | 23,9 i 0,5 0,489 | -161 8,96 92 0,024 |54 0,625 |-22 | 224 E 0,6 0,495 |-166 748 87 0,027 | 56 0,671 | -21 20,4 : 0,7 0,481 |-173 6,53 82 0,031 | 58 0,595 |-26 |19,3 - 08 0,484 |-178 5,79 78 0,033 | 57 0,603 |-22 | 184 - 0.9 0,490 174 5,13 74 0,036 | 58 0,535 {|-26 | 16,9 1,0 0,495 175 4,66 70 0,040 | 58 0,613 | -31 16,6 11 0,482 165 4,27 67 0,043 | 59 0,575 |-26 | 15,5 1,2 0,516 167 3,91 64 0,047 | 58 0,546 |-35 | 14,7 ‘ 1,3 0,473 161 3,59 61 0,050 |59 0,569 |-35 |13,9 . 1,4 0,532 161 3,31 58 0,053 | 59 0,573 |-38 |13,6 . 1,5 0,478 157 3,08 54 0,055 | 58 0,577 |-36 | 12,7 i 1.6 0,499 155 2,93 62 0,059 | 59 0,565 |-42 |12,2 é 1,7 0,471 162 2,74 49 0,063 | 59 0,686 |-41 11,7 . 1,8 ,.|0,498 148 2,60 47 0,067 | 58 0,583 |-46 | 11,3 1,9 0,497 146 2,50 44 0,071 |58 0,594 |-43 |11,1 2,0 0,492 144 2,39 4 0,076 ‘58 0,672 °-49 ‘10,6 . power gair =f) wine Powel gan of nolee atching Gy/MFig Hd Prot =f (Tame) bg Noise characteristic NF = f (ic) . COC | : aw PEE a A iso? [Wace [| ee COT ero Peete ey ryt [fee | NT | sot tT tT Tray ArT T Lee CCCP ea KP eta wo ELEC Kh meee TJ CTT rT Cee SOT ww CEE Ee] AS FEC e ere] 5} penaammas OL I ao EEE [Nose lances | CT Ty PTT ri peer tt wo EEC a . CTT Ter iy ry py ry yr ey » LITT Titi otTTtT ttt) 0 100 200°C o 10 20 30 40 mA ——> Tot mmetid 711