BFR14B SIEMENS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

= : a i. -- 25C D MM 8235605 COO4LS? T MMSIEG; 7 #7-/7 NPN Silicon Microwave Transistor up to 2 GHz BFR 14B j BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed : metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high : gain, and low distortion, the transistor is particularly intended for use in low-noise input : stages, broadband, IF, and radar amplifiers up to 4 GHz, as well as for oscillator circuits : of low performance up to 6 GHz. i The ceramic package is especially suitable for thin and thick film circuits and permits i Space applications. The emitter terminal is connected to the package. The transistor : is marked on its package with the short designation "14 B”. : ‘Emitter Type Mark Ordering code 3 605, s z . BFRI4B 148 062702-F494 sr ¢ Base Collector Emitter joey > 10) ont i ‘Approx. weight 0.08 g Dimensions in mm . Maximum ratings : Collector-emitter voltage Veeo 12 v . Collector-base voltage Vego 20 v Collector-emitter voltage (Ree S 50 Q) Veer 20 v Emitter-base voltage Veso 25 v : Collector current Ig 30 mA . Base current Tg 4 mA Junction temperature Tj 200 °c Storage temperature range Tatg -65to+176 | °C Total power dissipation (Tams S 137°C) Prot 260 mw Thermal resistance Junction to ambient air Rina | $250 | Kw when mounted on Alz 03 ceramics 16x25x0.6 mm or glass-fiber reinforced Teflon 40x25x1.6 mm : oa 703

2038 F-03 ‘

25C D MM 8235605 GOO4bSa 1 MMSIEG : _ ~_25C 04658 0. T3317 BFR14B — SIEMENS AKTIENGESELLSCHAF : Static characteristics (Tams = 25°C) Collector-emitter breakdown voltage (ceo = 500 A) Vieryceo 212 v Collector-emitter breakdown voltage (cer = 10 mA; Ree = 50 Q) Viarycer 220 Vv . Emitter-base breakdown voltage (ego = 100 pA) Vier)e8o 225 v Collector cutoff current (Veao = 10 V) Tego <60 nA (Vogo = 10 V; Tamb = 150°C) Teeo <50 pA ; Collector cutoff current : (Veg = 20 V; Vag = 0) Toes <100 HA : DC current gain Uc = 5 mA; Vee = 6 V) hee >30 - Dynamic characteristics (Tam = 25°C) Small signal current gain Ug = 20 mA; Veg = 6 V: f = 1 kHz) te 75 (235) | - (Ic = 20 mA; Vee = 6 V; f = 1 kHz) te 75 (235) | - Transition frequency (ic = 20 mA; Veg = 6 V; f = 200 MHz) fr 6 GHz : Reverse transfer capacitance . Uc = 1 mA; Vee = 6 V; f = 1 MHz) C120 0.45 ($0.65)| pF Noise figure : Uc = 2 mA; Veg = 10 V; ‘ f = 200 MHz; Rg = 100 Q) NF 1.5 (S2) dB Uc = 3 mA; Vee = 10 V; f= 2 GHz; Zy = Zg opt) NF 3.2 (84) dB i Power gain (Ig = 15 mA; Vog = 10 V; . f= 2GHz) Goo opt 12.5 (211). | dB > i i i i 704 4

2039 F-04

25C D M@™@ 46235605 0004659 3 MMSIEG;” | 25C 04659 O-7=3/-/7: pen ap S parameter i Operating point: Vog = 10 V, Ic = 3 mA, Zy = 50.9 : i t Sn 9 Sar 9 Sia ° S22 P | Gmax i (GHz) (dB) : 01 |ossa |- 18 |696 [16a loos |7e [1018 |-7 |- : 02 |0855 |- 34 |690 |153 |0032 |66 loos |-14 | 32,2 : 03 |o796 |- 49 |663 |141 |o045 |57 0,879 |-21 |271 04 |0,767 |- 65 |617 |131 |o054 |51 |o8oe |-28 | 242 i 08 |0,726 |-77 |568 |124 |oo61 |45 |ogoo |-31 | 228 ‘ 0,7 |0,650 |-104 |5,00 |108 Joo71 |35 0721 |-37 |195 ‘ 08 |oeas |-116 |466 | 101 |o074 |31 0677 |-36 |184 09 |oe02 |-128 |442 | 94 |o076 |28 |o602 |-42 |168 10 |ost0 }-136 |411 | 88 0078 |26 0653 |-44 |167 : 11 |o868 |-147 |389 | 83 |oos0 |24 ose |-42 | 153 : 1.2 |oe10 |-153 |361 | 78 |oogo |23 |0s866 |-50 |149 i 13 |0563 |-160 |337 | 74 |0,081 |21 |0663 |-49 |138 i 14 |0605 |-167 |316 | 70 |o082 |19 |oss8 |-53 | 13.6 : 16 |0652 |-170 |294 | 65 |0081 |19 |os42 |-49 126 { 16 |ose9 |-176 |283 | 62 |0081 |19 0,537 |-se | 122 i 117 |0642 | 179 |263 | 58 |o082 |19 0543 |-54 |114 1g foses | 172 |251 | 54 |oos2 |i9 jos34 |-69 | 11.2 i 19 |0565 | 168 /242 | 51 |o084 |18 0830 |-67 |108 20 |osez | 163 |233 | 47 |o085 |19 |o512 |-64 |103 . Operating point: Veg = 10 V, Ic = 10 mA, Zp = 50 2 01 0647 |- 35 |18,73 [155 0.014 ]69 0,959 |-14 | 38,7 02 |o604 |- 69 |17.15 |137 |0023 |65 |ogoo |-25 | 31.1 - 03 |0551 |- 97 |1460 |122 |0029 |49 |oe80 |-31 |276 : 04 |osss |-116 |1238 |111 |o033 |45 oso |-37 | 252 06 |0512 |-143 | 906 | 97 |0039 |44 0609 |-37 |21:8 : 07 |o492 |-184 | 798 | 90 |o042 |43 |0512 |-39 |206 : og |o497 |-162 | 7.11 | 88 |o,044 |43 |0473 |-36 | 194 : og |o492 |-172 | 636 | 80 |0,047 |43 |o4ta |-41 | 18,1 : 10 |0s809 |-175 | 582 | 76 |o0s0 |43 |o47a |-43 | 17,7 11 |0493 | 175 | 5.34 | 72 |0063 |43 |o422 |-38 |166 : 1.2 |0527 | 174 | 491 | 68 [0066 |43 |o410 |-48 |160 . 1:3 |0489 | 167 | 460 | 65 |ooss |43 |oai2 |-46 | 15,1 : 14 |osae | 165 | 4.17 | 62 |0061 |42 joa14 |-61 |148 18 |o494 | 161 | 388 | 68 0063 |43 |o40s |-a6 |138 116 |0517 | 158 | 369 | 56 |o06e |43 |0399 |-54 |13,4 1.7 |o494 | 164 | 346 | 53 |0070 |45 0413 |-50 |128 18 |osa1 | 150 | 326 | 49 |0073 |44 |oaor |-s6 |125 19 |0523 | 148 | 314 | 46 |o076 |43 |o4oa |-53 | 121 20 |0625 | 144 | 300 | 44 |ooso |43 |o3ee |-61 | 11.6 yor os 705 7 2040 F~05 :

ad - - arr, ae ~ oo OO : 25C D M™ 8235605 OOO4LEO T MMSIEG - _25C 04660 OT Bl-]7_ BFR1I4B . SIEMENS AKTIENGESELLSCHAF_ —————— . S parameter : Operating point: Voz = 10 V, Io = 20 mA, Z) = 602 t Sy @ {Se ° Si2 ° Soo 9 | Gmax : (GHz) (dB) 0,1 0478 |- 62 27,67 | 146 0,011 | 65 0,897 |-18 37,0 0,2 0,491 | -108 21,99 | 123 0,018 |53 0,699 |-26 | 31,0 0,3 0,492 | -133 16,91 110 0,021 | 61 0,585 |-29 | 27.6 0,4 0495 |-148 13,37 | 101 0,024 |50 0514 |-33 | 25,1 4 0,6 0,495 |-160 10,97 95 0,027 |51 0,521 |-31 23,4 . . 0,6 0,508 |-166 9,20 90 0,030 |52 0470 |-31 21,7 : 0,7 0,498 | -174 8,01 84 0,033 |53 0485 | -33 20,5 08 0,503 |-179 7,08 79 0,036 | 54 0462 |-28 19,3 0,9 0,510 172 6,30 75 0,039 |53 0405 |-35 18,1 1,0 0,520 171 5,74 71 0,043 | 54 0472 |-37 17,6 . 1,1 0,514 163 5,26 68 0,047 | 54 0427 |-32 16,6 1,2 0,542 163 483 65 0,050 | 53 0410 |-42 16,0 i 1,3 0,512 156 441 61 0,053 | 54 0419 | -40 16,1 : 14 0,565 157 4,07 58 0,055 | 54 0422 |-46 14,7 1,6 0,616 162 3,80 55 0,068 |53 0421 |-41 13,8 : 1.6 0,536 150 3,60 52 0,063 |54 0411 -49 13,4 “ 1,7 0,516 146 3,38 49 0,066 | 54 0430 |-46 |12,8 : 18 .0,552 143 3,20 46 0,071 |52 0418 |-52 12,5 ' 19 0,545 141 3,06 43 0,074 |52 0422 |-49 12,1 . 2,0 0,548 138 2,93 41 0,078 ‘52 0404 °-57 11,7 - aa Re.rgte reine 0 Piet sore anal 0 5 COMI Tro); e AHHH Pr . LTTE Tete CoeeCCSEC 1 Cee | cater. Kee eCLOCceecoco COeP ec eer EET TT TT HEEEE HHH LT TT Le COCECC cee LEE eT sCOCCCCeCco = COeecce err LTT ET Tet COCCE eee COCCELe COeP cece ero Coe LET TIT TT »>COEEEC CC 0 5 i) 5 20mA tL) 5 0 6 2 Bma —+k hk 706 ae .

2041 F-06

_ esc D = 8235605 Ooo4bb1 1 MESIEG. ; oe _ 2b 04661 i) T731-17 BFRI4B SIEMENS AKTIENGESELLSCHAF a ~ 7 CoLLLEL CL CoA * TT Croats |

1 CECT sv TTT:

5 IN | CVeceeee

Nii | 4 TAT TTI Cot oT IE eet HECCECe ee aq | A AC | sfees ATTN TI He | ed CT HEE EE pt | PCCeeeEEE i LTT TTT EOE: 10° ‘io Diy 10? 1082 0 5 1) 6 20 Bm ; —> ie —k H Total perm. power dissipation : so Ol -] . a Cobre ; EEE { FCC ives . me LoCo Ne Cecceeone Cocco EECA EEE = EEE Cece cocci Cece : CECECCeCAN : ECEE EEC e wCOCCCCCCOn 0 100 200°C —> Tans