BFR106 NJSEMI | Alldatasheet

Document overview

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Technical content

, U nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN RF Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BFR106

DESCRIPTION

  • Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, lc = 20 mA, f = 900 MHz
  • High Gain I S2ie I 2 = 10.5 dB TYP. @VCE= 8 V,lc = 70 mA,f = 900 MHz

APPLICATIONS

  • Designed for use in low noise .high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCES VCEO VEBO lc IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature Range VALUE 100 0.7 150 -65-150 UNIT V V V V mA mA W -£\\"^ fT--C>^ -^ H | h* -ill Marking U1 j U- L_Jrjq / \\p r-i) L _j— T^j- I 1 DIM A B C D H K L M SOT- 2 3 package 3 C ii _^'J 1 : Base 2: Emitter 3; Collector I mm WIN 0,37 1.19 2, 10 0,39 1.78 2.65 1. 10 0. -!.5 0.076 MAX 0. 51 1. 50 2. 50 1.05 2.05 3, 05 1.30 0,61 0, 17S M NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified SYMBOL V(BR)CEO ICES ICBO IEBO HFE fr COB PG PG I S21e 1 2 I S21e 1 2 NF NF PARAMETER Collector-Emitter Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Output Capacitance Power Gain Power Gain Insertion Power Gain Insertion Power Gain Noise Figure Noise Figure CONDITIONS lc= 1mA; IB= 0 VCE= 20V; VBE= 0 VCB=10V;IE=0 VEB= 2V; lc= 0 lc= 70mA ; VCE= 8V lc= 70mA ; VCE= 8V; f= 500MHz |E=0;VCB=10V;f=1MHz lc= 70mA ; VCE= 8V; f= 900MHz lc= 70mA ; VCE= 8V; f= 1 .8GHz lc= 70mA ; VCE= 8V; f= 900MHz lc= 70mA ; VCE= 8V; f= 1 ,8GHz lc= 20mA ; VCE= 8V; f= 900MHz lc= 20mA ; VCE= 8V; f= 1 .8GHz MIN 3.5 TYP. 0.95 12.5 7.5 10.5 2.5 MAX 100 0.1 220 1.5 UNIT V nA uA uA GHz PF dB dB dB dB dB dB